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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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Gallium Nitride (GaN) - Physics, Devices, and Technology (Paperback)
Loot Price: R2,499
Discovery Miles 24 990
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Gallium Nitride (GaN) - Physics, Devices, and Technology (Paperback)
Series: Devices, Circuits, and Systems
Expected to ship within 12 - 17 working days
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Addresses a Growing Need for High-Power and High-Frequency
Transistors Gallium Nitride (GaN): Physics, Devices, and Technology
offers a balanced perspective on the state of the art in gallium
nitride technology. A semiconductor commonly used in bright
light-emitting diodes, GaN can serve as a great alternative to
existing devices used in microelectronics. It has a wide band gap
and high electron mobility that gives it special properties for
applications in optoelectronic, high-power, and high-frequency
devices, and because of its high off-state breakdown strength
combined with excellent on-state channel conductivity, GaN is an
ideal candidate for switching power transistors. Explores Recent
Progress in High-Frequency GaN Technology Written by a panel of
academic and industry experts from around the globe, this book
reviews the advantages of GaN-based material systems suitable for
high-frequency, high-power applications. It provides an overview of
the semiconductor environment, outlines the fundamental device
physics of GaN, and describes GaN materials and device structures
that are needed for the next stage of microelectronics and
optoelectronics. The book details the development of radio
frequency (RF) semiconductor devices and circuits, considers the
current challenges that the industry now faces, and examines future
trends. In addition, the authors: Propose a design in which
multiple LED stacks can be connected in a series using interband
tunnel junction (TJ) interconnects Examine GaN technology while in
its early stages of high-volume deployment in commercial and
military products Consider the potential use of both sunlight and
hydrogen as promising and prominent energy sources for this
technology Introduce two unique methods, PEC oxidation and vapor
cooling condensation methods, for the deposition of high-quality
oxide layers A single-source reference for students and
professionals, Gallium Nitride (GaN): Physics, Devices, and
Technology provides an overall assessment of the semiconductor
environment, discusses the potential use of GaN-based technology
for RF semiconductor devices, and highlights the current and
emerging applications of GaN.
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