Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Hardcover, 1st ed. 2018)

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

General

Imprint:	Springer International Publishing AG
Country of origin:	Switzerland
Series:	Integrated Circuits and Systems
Release date:	May 2018
First published:	2018
Editors:	Gaudenzio Meneghesso • Matteo Meneghini • Enrico Zanoni
Dimensions:	235 x 155mm (L x W)
Format:	Hardcover
Pages:	232
Edition:	1st ed. 2018
ISBN-13:	978-3-319-77993-5
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
LSN:	3-319-77993-1
Barcode:	9783319779935

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