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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Hardcover, 1st ed. 2018)
Loot Price: R3,800
Discovery Miles 38 000
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Hardcover, 1st ed. 2018)
Series: Integrated Circuits and Systems
Expected to ship within 12 - 17 working days
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This book demonstrates to readers why Gallium Nitride (GaN)
transistors have a superior performance as compared to the already
mature Silicon technology. The new GaN-based transistors here
described enable both high frequency and high efficiency power
conversion, leading to smaller and more efficient power systems.
Coverage includes i) GaN substrates and device physics; ii)
innovative GaN -transistors structure (lateral and vertical); iii)
reliability and robustness of GaN-power transistors; iv) impact of
parasitic on GaN based power conversion, v) new power converter
architectures and vi) GaN in switched mode power conversion.
Provides single-source reference to Gallium Nitride (GaN)-based
technologies, from the material level to circuit level, both for
power conversions architectures and switched mode power amplifiers;
Demonstrates how GaN is a superior technology for switching
devices, enabling both high frequency, high efficiency and lower
cost power conversion; Enables design of smaller, cheaper and more
efficient power supplies.
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