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Nonvolatile Memory Design - Magnetic, Resistive, and Phase Change (Hardcover, New) Loot Price: R8,082
Discovery Miles 80 820
Nonvolatile Memory Design - Magnetic, Resistive, and Phase Change (Hardcover, New): Hai Li, Yiran Chen

Nonvolatile Memory Design - Magnetic, Resistive, and Phase Change (Hardcover, New)

Hai Li, Yiran Chen

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Loot Price R8,082 Discovery Miles 80 820 | Repayment Terms: R757 pm x 12*

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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

General

Imprint: Crc Press
Country of origin: United States
Release date: December 2011
First published: 2012
Authors: Hai Li • Yiran Chen
Dimensions: 234 x 156 x 18mm (L x W x T)
Format: Hardcover
Pages: 204
Edition: New
ISBN-13: 978-1-4398-0745-3
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
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LSN: 1-4398-0745-0
Barcode: 9781439807453

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