The manufacture of flash memory, which is the dominant
nonvolatile memory technology, is facing severe technical barriers.
So much so, that some emerging technologies have been proposed as
alternatives to flash memory in the nano-regime. Nonvolatile Memory
Design: Magnetic, Resistive, and Phase Changing introduces three
promising candidates: phase-change memory, magnetic random access
memory, and resistive random access memory. The text illustrates
the fundamental storage mechanism of these technologies and
examines their differences from flash memory techniques. Based on
the latest advances, the authors discuss key design methodologies
as well as the various functions and capabilities of the three
nonvolatile memory technologies.
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