Epitaxial integration of III-V semiconductors on silicon substrates
has been desired over decades for high application potential in
microelectronics, photovoltaics, and beyond. The performance of
optoelectronic devices is still severely impaired by critical
defect mechanisms driven by the crucial polar-on-nonpolar
heterointerface. This thesis reports almost lattice-matched
growth of thin gallium phosphide films as a viable model system for
III-V/Si(100) interface investigations. The impact of antiphase
disorder on the heteroepitaxial growth surface provides
quantitative optical in situ access to one of the most notorious
defect mechanisms, even in the vapor phase ambient common for
compound semiconductor technology. Precise control over the surface
structure of the Si(100) substrates prior to III-V nucleation
prevents the formation of antiphase domains. The hydrogen-based
process ambient enables the preparation of anomalous double-layer
step structures on Si(100), highly beneficial for subsequent III-V
integration.
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