Co-integration of sensors with their associated electronics on a
single silicon chip may provide many significant benefits regarding
performance, reliability, miniaturization and process simplicity
without significantly increasing the total cost.
Micromachined Thin-Film Sensors for SOI-CMOS Co-integration
covers the challenges and interests and demonstrates the successful
co-integration of gas-flow sensors on dielectric membrane, with
their associated electronics, in CMOS-SOI technology.
We firstly investigate the extraction of residual stress in thin
layers and in their stacking and the release, in post-processing,
of a 1 Am-thick robust and flat dielectric multilayered membrane
using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining
solution. The optimization of its selectivity towards aluminum is
largely demonstrated.
The second part focuses on sensors design and characteristics. A
novel loop-shape polysilicon microheater is designed and built in a
CMOS-SOI standard process. High thermal uniformity, low power
consumption and high working temperature are confirmed by extensive
measurements. The additional gas flow sensing layers are
judiciously chosen and implemented. Measurements in the presence of
a nitrogen flow and gas reveal fair sensitivity on a large flow
velocity range as well as good response to many gases. Finally, MOS
transistors suspended on released dielectric membranes are
presented and fully characterized as a concluding demonstrator of
the co-integration in SOI technology.
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