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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors (Hardcover, New) Loot Price: R3,243
Discovery Miles 32 430
Repayment Terms: R304 pm x 12*
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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors (Hardcover, New): Jianjun Gao

RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors (Hardcover, New)

Jianjun Gao

Series: Electromagnetic Waves

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Loot Price R3,243 Discovery Miles 32 430 | Repayment Terms: R304 pm x 12*

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This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success. The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such as: small signal, large signal, noise, and the artificial neural network based.

General

Imprint: SciTech Publishing
Country of origin: United States
Series: Electromagnetic Waves
Release date: June 2010
First published: December 2010
Authors: Jianjun Gao
Dimensions: 229 x 152mm (L x W)
Format: Hardcover - Cloth over boards
Pages: 350
Edition: New
ISBN-13: 978-1-891121-89-0
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Microwave technology
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LSN: 1-891121-89-8
Barcode: 9781891121890

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