Silicon-Based Millimeter-Wave Devices describes field-theoretical
methods for the design and analysis of planar waveguide structures
and antennas. The principles and limitations of transit-time
devices with different injection mechanisms are discussed, as are
aspects of fabrication and characterization. The physical
properties of silicon Schottky contacts and diodes are treated in a
separate chapter. Two chapters cover the silicon/germanium devices:
physics and RF properties of the heterobipolar transistor and
quantum effect devices such as the resonant tunneling element are
described. The integration of devices in monolithic circuits is
explained and advanced technologies are presented along with the
self-mixing oscillator operation. Finally sensor and system
applications are considered.
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