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Low Power and Reliable SRAM Memory Cell and Array Design (Paperback, 2011 ed.) Loot Price: R2,616
Discovery Miles 26 160
Repayment Terms: R245 pm x 12*
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Low Power and Reliable SRAM Memory Cell and Array Design (Paperback, 2011 ed.): Koichiro Ishibashi, Kenichi Osada

Low Power and Reliable SRAM Memory Cell and Array Design (Paperback, 2011 ed.)

Koichiro Ishibashi, Kenichi Osada

Series: Springer Series in Advanced Microelectronics, 31

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Loot Price R2,616 Discovery Miles 26 160 | Repayment Terms: R245 pm x 12*

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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

General

Imprint: Springer-Verlag
Country of origin: Germany
Series: Springer Series in Advanced Microelectronics, 31
Release date: November 2013
First published: 2011
Editors: Koichiro Ishibashi • Kenichi Osada
Dimensions: 235 x 155 x 8mm (L x W x T)
Format: Paperback
Pages: 144
Edition: 2011 ed.
ISBN-13: 978-3-642-27018-5
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
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LSN: 3-642-27018-2
Barcode: 9783642270185

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