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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials

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Low Power and Reliable SRAM Memory Cell and Array Design (Hardcover, 2011 ed.) Loot Price: R3,011

Discovery Miles 30 110

Repayment Terms: R282 pm x 12*

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Low Power and Reliable SRAM Memory Cell and Array Design (Hardcover, 2011 ed.): Koichiro Ishibashi, Kenichi Osada

Low Power and Reliable SRAM Memory Cell and Array Design (Hardcover, 2011 ed.)

Koichiro Ishibashi, Kenichi Osada

Series: Springer Series in Advanced Microelectronics, 31

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Loot Price R3,011 Discovery Miles 30 110 | Repayment Terms: R282 pm x 12*

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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Springer Series in Advanced Microelectronics, 31
Release date:	August 2011
First published:	2011
Editors:	Koichiro Ishibashi • Kenichi Osada
Dimensions:	235 x 155 x 13mm (L x W x T)
Format:	Hardcover
Pages:	144
Edition:	2011 ed.
ISBN-13:	978-3-642-19567-9
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General Promotions
LSN:	3-642-19567-9
Barcode:	9783642195679