Remarkable developments in bipolar technology over the past decade
have seen the silicon-germanium heterojunction bipolar transistor
(SiGe HBT) emerge from research labs to enter production in radio
frequency technologies. These developments have allowed SiGe BiCMOS
transistors to address high-frequency wireless and optical
communications applications that were previously only possible in
III/V and II/VI devices. This book brings together for the first
time all the new developments and describes in a unified manner the
physics, materials science and technology of silicon bipolar
transistors and SiGe HBTs.
Featuring: Basic device physics concepts presented in a simple
and concise way. All the key technology innovations in detail,
including polysilicon emitters, selective implanted collectors,
selective and differential SiGe(C) epitaxy, and technology case
studies. Compact models of bipolar transistors, including Gummel
Poon, Mextram and VBIC. Overall bipolar technology, device and
circuit optimisation.
"SiGe Heterojunction Bipolar Transistors" is an essential tool
for practising process engineers and integrated circuit designers
in the semiconductor, optical communications and wireless
communications industries. University researchers, scientists and
postgraduates students in microelectronics, semiconductors and
electronic engineering will find this book an invaluable
reference.
Professor Ashburn has worked as an industrial engineer, a
consultant and a university professor and has accumulated a wealth
of practical knowledge for incorporation in this book.
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