This book discusses one possible solution to the key issue in
electronics engineering - the approaching limits of CMOS scaling -
by taking advantage of the tendency of Schottky contacts to form at
channel interfaces in nanoscale devices. Rather than suppressing
this phenomenon, a functionality-enhanced device exploits it to
increase switching functionality. These devices are
Multiple-Independent-Gate-Field-Effect-Transistors, and other
related nanoscale devices, whose polarity is electrostatically
controllable. The functionality enhancement of these devices
increases computational performance (function) per unit area and
leads to circuits with better density, performance and energy
efficiency. The book provides thorough and systematic coverage of
enhanced-functionality devices and their use in proof-of-concept
circuits and architectures. The theory and materials science behind
these devices are addressed in detail, and various experimental
fabrication techniques are explored. In addition, the potential
applications of functionality-enhanced devices are outlined with a
specific emphasis on circuit design, design automation and
benchmarking.
General
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