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Integrated Electronics on Aluminum Nitride - Materials and Devices (Hardcover, 1st ed. 2022)
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Integrated Electronics on Aluminum Nitride - Materials and Devices (Hardcover, 1st ed. 2022)
Series: Springer Theses
Expected to ship within 10 - 15 working days
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This thesis outlines the principles, device physics, and
technological applications of electronics based on the ultra-wide
bandgap semiconductor aluminum nitride. It discusses the basic
principles of electrostatics and transport properties of
polarization-induced two-dimensional electron and hole channels in
semiconductor heterostructures based on aluminum nitride. It
explains the discovery of high-density two-dimensional hole gases
in undoped heterojunctions, and shows how these high conductivity
n- and p-type channels are used for high performance nFETs and
pFETs, along with wide bandgap RF, mm-wave, and CMOS applications.
The thesis goes on to discuss how the several material advantages
of aluminum nitride, such as its high thermal conductivity and
piezoelectric coefficient, enable not just high performance of
transistors, but also monolithic integration of passive elements
such as high frequency filters, enabling a new form factor for
integrated RF electronics.
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