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Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Other manufacturing technologies > Precision instruments manufacture

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Novel Three-state Quantum Dot Gate Field Effect Transistor - Fabrication, Modeling and Applications (Hardcover, 2014 ed.) Loot Price: R3,204
Discovery Miles 32 040
Repayment Terms: R300 pm x 12*
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Novel Three-state Quantum Dot Gate Field Effect Transistor - Fabrication, Modeling and Applications (Hardcover, 2014 ed.):...

Novel Three-state Quantum Dot Gate Field Effect Transistor - Fabrication, Modeling and Applications (Hardcover, 2014 ed.)

Supriya Karmakar

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Loot Price R3,204 Discovery Miles 32 040 | Repayment Terms: R300 pm x 12*

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The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

General

Imprint: Springer, India, Private Ltd
Country of origin: India
Release date: December 2013
First published: 2014
Authors: Supriya Karmakar
Dimensions: 235 x 155 x 9mm (L x W x T)
Format: Hardcover
Pages: 134
Edition: 2014 ed.
ISBN-13: 978-81-322-1634-6
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components
Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Other manufacturing technologies > Precision instruments manufacture > General
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LSN: 81-322-1634-2
Barcode: 9788132216346

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