0
Your cart

Your cart is empty

Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids)

Buy Now

Heterostructures on Silicon: One Step Further with Silicon (Paperback, Softcover reprint of the original 1st ed. 1989) Loot Price: R1,546
Discovery Miles 15 460
Heterostructures on Silicon: One Step Further with Silicon (Paperback, Softcover reprint of the original 1st ed. 1989): Y....

Heterostructures on Silicon: One Step Further with Silicon (Paperback, Softcover reprint of the original 1st ed. 1989)

Y. Nissim, Emmanuel Rosencher

Series: NATO Science Series E:, 160

 (sign in to rate)
Loot Price R1,546 Discovery Miles 15 460 | Repayment Terms: R145 pm x 12*

Bookmark and Share

Expected to ship within 10 - 15 working days

In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100 DegreesC so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

General

Imprint: Springer
Country of origin: Netherlands
Series: NATO Science Series E:, 160
Release date: September 2011
First published: 1989
Editors: Y. Nissim • Emmanuel Rosencher
Dimensions: 235 x 155 x 19mm (L x W x T)
Format: Paperback
Pages: 368
Edition: Softcover reprint of the original 1st ed. 1989
ISBN-13: 978-9401069007
Categories: Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids)
Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
Books > Science & Mathematics > Chemistry > Analytical chemistry > Qualitative analytical chemistry > Chemical spectroscopy, spectrochemistry > General
Promotions
LSN: 940106900X
Barcode: 9789401069007

Is the information for this product incomplete, wrong or inappropriate? Let us know about it.

Does this product have an incorrect or missing image? Send us a new image.

Is this product missing categories? Add more categories.

Review This Product

No reviews yet - be the first to create one!

Partners