Compound Semiconductor Materials and Devices (Paperback)

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

General

Imprint:	Springer International Publishing AG
Country of origin:	Switzerland
Series:	Synthesis Lectures on Emerging Engineering Technologies
Release date:	February 2016
First published:	2016
Authors:	Zhaojun Liu • Tongde Huang • Qiang Li • Xing Lu • Xinbo Zou
Dimensions:	235 x 191mm (L x W)
Format:	Paperback
Pages:	65
ISBN-13:	978-3-03-100900-6
Languages:	English
Subtitles:	English
Categories:	Books > Professional & Technical > Technology: general issues > Engineering: general Books > Computing & IT > Computer hardware & operating systems > General Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Books > Professional & Technical > Energy technology & engineering > Electrical engineering > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components Promotions
LSN:	3-03-100900-2
Barcode:	9783031009006

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