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Books > Professional & Technical > Energy technology & engineering > Electrical engineering
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Compound Semiconductor Materials and Devices (Paperback)
Loot Price: R859
Discovery Miles 8 590
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Compound Semiconductor Materials and Devices (Paperback)
Series: Synthesis Lectures on Emerging Engineering Technologies
Expected to ship within 10 - 15 working days
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Ever since its invention in the 1980s, the compound semiconductor
heterojunction-based high electron mobility transistor (HEMT) has
been widely used in radio frequency (RF) applications. This book
provides readers with broad coverage on techniques and new trends
of HEMT, employing leading compound semiconductors, III-N and III-V
materials. The content includes an overview of GaN HEMT
device-scaling technologies and experimental research breakthroughs
in fabricating various GaN MOSHEMT transistors. Readers are offered
an inspiring example of monolithic integration of HEMT with LEDs,
too. The authors compile the most relevant aspects of III-V HEMT,
including the current status of state-of-art HEMTs, their
possibility of replacing the Si CMOS transistor channel, and growth
opportunities of III-V materials on an Si substrate. With detailed
exploration and explanations, the book is a helpful source suitable
for anyone learning about and working on compound semiconductor
devices.
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