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During the last 25 years (after the growth of the first
pseudomorphic GeSi strained layers on Si by Erich Kasper in
Germany) we have seen a steady accu- mulation of new materials and
devices with enhanced performance made pos- sible by strain.
1989-1999 have been very good years for the strained-Iayer-
devices. Several breakthroughs were made in the growth and doping
technology of strained layers. New devices were fabricated as a
results of these break- throughs. Before the advent of strain layer
epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f.
Lm) regions of the spectrum were not accessi- ble to the photonic
devices. Short wavelength Light Emitting Diodes (LEDs) and Laser
Diodes (LDs) have now been developed using III-Nitride and II-VI
strained layers. Auger recombination increases rapidly as the
bandgap narrows and temperature increases. Therefore it was
difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect
of strain in modifying the band-structure and suppressing the Auger
recombination has been most spectacular. It is due to the strain
mediated band-structure engineering that mid-IR lasers with good
per- formance have been fabricated in several laboratories around
the world. Many devices based on strained layers have reached the
market place. This book de- scribes recent work on the growth,
characterization and properties o(compound semiconductors strained
layers and devices fabricated using them.
There is a growing demand for electronic signal processing at
elevated temperatures. A number of approaches have been used to
develop this capability. Silicon circuits could be developed and
fabricated with an appropriate technology to cover increased
temperature ranges. In a search for semiconductors with a wider
energy gap to avoid leakage currents at high operating
temperatures, one developed compound semiconductors such as GaAIAs
on GaAs substrates. Efforts to use GaN are also useful, although
difficult due to the lack of a suitable substrate material for
lattice-matched epitaxial growth. Other work concerns electronic
compo nent and circuit developments with SiC. Preliminary results
have proved interesting. This book attempts to present the
possibilities of such circuitry. Some of the solutions obtained so
far are directly usable for the many applications where high
environmental temperatures exist. Other concepts, particularly the
more demanding ones, such as operation above 500 DegreesC, still
need much more researching. This also concerns estimates of device
lifetimes for con tinuous high temperature operation. This book may
help the potential user of such circuitry to find a suitable
solution. It should also stimulate more research groups to enter
this demanding effort. And finally, it should stimulate a broad
awareness of the need and the solutions for this type of
electronics. That is why Part One is devoted to high temperature
applications.
During the last 25 years (after the growth of the first
pseudomorphic GeSi strained layers on Si by Erich Kasper in
Germany) we have seen a steady accu- mulation of new materials and
devices with enhanced performance made pos- sible by strain.
1989-1999 have been very good years for the strained-Iayer-
devices. Several breakthroughs were made in the growth and doping
technology of strained layers. New devices were fabricated as a
results of these break- throughs. Before the advent of strain layer
epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f.
Lm) regions of the spectrum were not accessi- ble to the photonic
devices. Short wavelength Light Emitting Diodes (LEDs) and Laser
Diodes (LDs) have now been developed using III-Nitride and II-VI
strained layers. Auger recombination increases rapidly as the
bandgap narrows and temperature increases. Therefore it was
difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect
of strain in modifying the band-structure and suppressing the Auger
recombination has been most spectacular. It is due to the strain
mediated band-structure engineering that mid-IR lasers with good
per- formance have been fabricated in several laboratories around
the world. Many devices based on strained layers have reached the
market place. This book de- scribes recent work on the growth,
characterization and properties o(compound semiconductors strained
layers and devices fabricated using them.
There is a growing demand for electronic signal processing at
elevated temperatures. A number of approaches have been used to
develop this capability. Silicon circuits could be developed and
fabricated with an appropriate technology to cover increased
temperature ranges. In a search for semiconductors with a wider
energy gap to avoid leakage currents at high operating
temperatures, one developed compound semiconductors such as GaAIAs
on GaAs substrates. Efforts to use GaN are also useful, although
difficult due to the lack of a suitable substrate material for
lattice-matched epitaxial growth. Other work concerns electronic
compo nent and circuit developments with SiC. Preliminary results
have proved interesting. This book attempts to present the
possibilities of such circuitry. Some of the solutions obtained so
far are directly usable for the many applications where high
environmental temperatures exist. Other concepts, particularly the
more demanding ones, such as operation above 500 DegreesC, still
need much more researching. This also concerns estimates of device
lifetimes for con tinuous high temperature operation. This book may
help the potential user of such circuitry to find a suitable
solution. It should also stimulate more research groups to enter
this demanding effort. And finally, it should stimulate a broad
awareness of the need and the solutions for this type of
electronics. That is why Part One is devoted to high temperature
applications.
Low Temperature Chemical Nanofabrication: Recent Progress,
Challenges and Emerging Technologies offers a thorough and
theoretical background to nanoscale fabrication phenomena, also
covering important practical applications. It covers the
conventional top down and the newly emerging bottom up processing
methods. The latter has proven to be feasible for obtaining device
quality material and can either be performed using high or low
temperature processing. Low temperature (?100 oC), in particular,
is becoming increasingly used due to its simplicity and varied
applications, with huge benefits for developing new devices and
flexible non-conventional substrates. This important resource is
ideal for researchers seeking to learn more about the fundamental
theories related to nanoscale phenomena and nanofabrication.
ZnO nanostructure is a material that is central for many
nanotechnology applications, such as chemical and biological
sensors. A systematic molecular dynamics study for the behaviour of
water droplet and electrolyte solutions interacting with ZnO was
concluded. The contact angle of a water droplet on ZnO polar slabs
and nanorods/-tubes array changes significantly as a function of
the ZnO-water interaction energy and nanostructure geometry. The
water contact angle served as a criterion to tune the
intermolecular interactions. This book uses ZnO nanotubes to study
the permeation of water for equilibrium and applied voltage cases
in order to illustrate the influence of the surface topography and
the intermolecular parameters and surface charges on permeation
kinetics.
A comprehensive guide to the development and application of smart
sensing technologies for water and food quality monitoring With
contributions from a panel of experts on the topic, Sensing
Technologies for Real Time Monitoring of Water Quality offers an
authoritative resource that explores a complete set of sensing
technologies designed to monitor, in real time, water and food
(aquaculture) quality. The contributing authors explore the
fundamentals of sensing technologies and review the most recent
advances of various materials and sensors for water quality
monitoring. This comprehensive resource includes information on a
range of designs of smart electronics, communication systems,
packaging, and innovative implementation approaches used for remote
monitoring of water quality in various atmospheres. The book
explores a variety of techniques for data analysis of the sensors
as well as contains artificial intelligence, big data technologies,
and machine learning approaches used for monitoring and evaluation.
In addition, this indispensible resource highlights sustainable
environmental and policy issues, including ways for food and water
managers to can help to reduce their carbon footprint. This
important book: Puts the spotlight on the potential capabilities
and the limitations of various sensing technologies and wireless
systems Offers an evaluation of a variety of sensing materials,
substrates, and designs of sensors Includes information on the
common characteristics, ideas, and approaches of water quality and
quantity management Presents techniques for manager for reducing
their carbon footprint Written for students and
practitioners/researchers in food and water quality management,
Sensing Technologies for Real Time Monitoring of Water Quality
offers, in one volume, a guide to the real time sensing techniques
that can improve water and food quality.
Coined as the third revolution in electronics is under way;
Manufacturing is going digital, driven by computing revolution,
powered by MOS technology, in particular, by the CMOS technology
and its development.In this book, the scaling challenges for CMOS:
SiGe BiCMOS, THz and niche technology are covered; the first
article looks at scaling challenges for CMOS from an industrial
point of view (review of the latest innovations); the second
article focuses on SiGe BiCMOS technologies (deals with high-speed
up to the THz-region), and the third article reports on circuits
associated with source/drain integration in 14 nm and beyond FinFET
technology nodes. Followed by the last two articles on niche
applications for emerging technologies: one deals with carbon
nanotube network and plasmonics for the THz region carbon, while
the other reviews the recent developments in integrated on-chip
nano-optomechanical systems.
Zinc oxide (ZnO) in its nanostructured form is emerging as a
promising material with great potential for the development of many
smart electronic devices. This book presents up-to-date information
about various synthesis methods to obtain device-quality ZnO
nanostructures. It describes both high-temperature (over 100
Degrees C) and low-temperature (under 100 Degrees C) approaches to
synthesizing ZnO nanostructures; device applications for technical
and medical devices, light-emitting diodes, electrochemical
sensors, nanogenerators, and photodynamic therapy; and the concept
of self-powered devices and systems using ZnO nanostructures. The
book emphasizes the utilization of non-conventional substrates such
as plastic, paper, and textile as new platforms for developing
electronics.
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