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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors

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Compound Semiconductors Strained Layers and Devices (Hardcover, 2000 ed.) Loot Price: R4,747
Discovery Miles 47 470
Compound Semiconductors Strained Layers and Devices (Hardcover, 2000 ed.): Suresh Jain, Magnus Willander, R. Van Overstraeten

Compound Semiconductors Strained Layers and Devices (Hardcover, 2000 ed.)

Suresh Jain, Magnus Willander, R. Van Overstraeten

Series: Electronic Materials Series, 7

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Loot Price R4,747 Discovery Miles 47 470 | Repayment Terms: R445 pm x 12*

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During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

General

Imprint: Springer
Country of origin: Netherlands
Series: Electronic Materials Series, 7
Release date: March 2000
First published: 2000
Editors: Suresh Jain • Magnus Willander • R. Van Overstraeten
Dimensions: 235 x 155 x 20mm (L x W x T)
Format: Hardcover
Pages: 337
Edition: 2000 ed.
ISBN-13: 978-0-7923-7769-6
Categories: Books > Science & Mathematics > Physics > Electricity, magnetism & electromagnetism
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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LSN: 0-7923-7769-9
Barcode: 9780792377696

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