During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 DegreesC, still need much more researching. This also concerns estimates of device lifetimes for con tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

A comprehensive guide to the development and application of smart sensing technologies for water and food quality monitoring With contributions from a panel of experts on the topic, Sensing Technologies for Real Time Monitoring of Water Quality offers an authoritative resource that explores a complete set of sensing technologies designed to monitor, in real time, water and food (aquaculture) quality. The contributing authors explore the fundamentals of sensing technologies and review the most recent advances of various materials and sensors for water quality monitoring. This comprehensive resource includes information on a range of designs of smart electronics, communication systems, packaging, and innovative implementation approaches used for remote monitoring of water quality in various atmospheres. The book explores a variety of techniques for data analysis of the sensors as well as contains artificial intelligence, big data technologies, and machine learning approaches used for monitoring and evaluation. In addition, this indispensible resource highlights sustainable environmental and policy issues, including ways for food and water managers to can help to reduce their carbon footprint. This important book: Puts the spotlight on the potential capabilities and the limitations of various sensing technologies and wireless systems Offers an evaluation of a variety of sensing materials, substrates, and designs of sensors Includes information on the common characteristics, ideas, and approaches of water quality and quantity management Presents techniques for manager for reducing their carbon footprint Written for students and practitioners/researchers in food and water quality management, Sensing Technologies for Real Time Monitoring of Water Quality offers, in one volume, a guide to the real time sensing techniques that can improve water and food quality.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 DegreesC, still need much more researching. This also concerns estimates of device lifetimes for con tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.

Low Temperature Chemical Nanofabrication: Recent Progress, Challenges and Emerging Technologies offers a thorough and theoretical background to nanoscale fabrication phenomena, also covering important practical applications. It covers the conventional top down and the newly emerging bottom up processing methods. The latter has proven to be feasible for obtaining device quality material and can either be performed using high or low temperature processing. Low temperature (?100 oC), in particular, is becoming increasingly used due to its simplicity and varied applications, with huge benefits for developing new devices and flexible non-conventional substrates. This important resource is ideal for researchers seeking to learn more about the fundamental theories related to nanoscale phenomena and nanofabrication.

ZnO nanostructure is a material that is central for many nanotechnology applications, such as chemical and biological sensors. A systematic molecular dynamics study for the behaviour of water droplet and electrolyte solutions interacting with ZnO was concluded. The contact angle of a water droplet on ZnO polar slabs and nanorods/-tubes array changes significantly as a function of the ZnO-water interaction energy and nanostructure geometry. The water contact angle served as a criterion to tune the intermolecular interactions. This book uses ZnO nanotubes to study the permeation of water for equilibrium and applied voltage cases in order to illustrate the influence of the surface topography and the intermolecular parameters and surface charges on permeation kinetics.

Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic devices. This book presents up-to-date information about various synthesis methods to obtain device-quality ZnO nanostructures. It describes both high-temperature (over 100 Degrees C) and low-temperature (under 100 Degrees C) approaches to synthesizing ZnO nanostructures; device applications for technical and medical devices, light-emitting diodes, electrochemical sensors, nanogenerators, and photodynamic therapy; and the concept of self-powered devices and systems using ZnO nanostructures. The book emphasizes the utilization of non-conventional substrates such as plastic, paper, and textile as new platforms for developing electronics.