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This book provides readers with a variety of tools to address the
challenges posed by hot carrier degradation, one of today's most
complicated reliability issues in semiconductor devices. Coverage
includes an explanation of carrier transport within devices and
book-keeping of how they acquire energy ("become hot"), interaction
of an ensemble of colder and hotter carriers with defect
precursors, which eventually leads to the creation of a defect, and
a description of how these defects interact with the device,
degrading its performance.
Dear Readers, Since the ground-breaking, Nobel-prize crowned work
of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers
and polymers with an alternating bonding structure at the end of
the 1970s, the academic and industrial research on
hydrocarbon-based semiconducting materials and devices has made
encouraging progress. The strengths of semiconducting polymers are
currently mainly unfolding in cheap and easily assembled thin ?lm
transistors, light emitting diodes, and organic solar cells. The
use of so-called "plastic chips" ranges from lightweight, portable
devices over large-area applications to gadgets demanding a degree
of mechanical ?exibility, which would overstress
conventionaldevices based on inorganic,perfect crystals. The ?eld
of organic electronics has evolved quite dynamically during the
last few years; thus consumer electronics based on molecular
semiconductors has gained suf?cient market attractiveness to be
launched by the major manufacturers in the recent past.
Nonetheless, the numerous challenges related to organic device
physics and the physics of ordered and disordered molecular solids
are still the subjects of a cont- uing lively debate. The future of
organic microelectronics will unavoidably lead to new devi-
physical insights and hence to novel compounds and device
architectures of - hanced complexity. Thus, the early evolution of
predictive models and precise, computationally effective simulation
tools for computer-aided analysis and design of promising device
prototypes will be of crucial importance.
This book summarizes the state-of-the-art, regarding noise in
nanometer semiconductor devices. Readers will benefit from this
leading-edge research, aimed at increasing reliability based on
physical microscopic models. Authors discuss the most recent
developments in the understanding of point defects, e.g. via ab
initio calculations or intricate measurements, which have paved the
way to more physics-based noise models which are applicable to a
wider range of materials and features, e.g. III-V materials, 2D
materials, and multi-state defects. Describes the state-of-the-art,
regarding noise in nanometer semiconductor devices; Enables readers
to design more reliable semiconductor devices; Offers the most
up-to-date information on point defects, based on physical
microscopic models.
This volume contains the proceedings of the 12th International
Conference on Simulation of Semiconductor Processes and Devices,
SISPAD 2007, held September 2007 in Vienna, Austria. It provides a
global forum for the presentation and discussion of recent advances
and developments in the theoretical description, physical modeling
and numerical simulation and analysis of semiconductor fabrication
processes, device operation and system performance.
Dear Readers, Since the ground-breaking, Nobel-prize crowned work
of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers
and polymers with an alternating bonding structure at the end of
the 1970s, the academic and industrial research on
hydrocarbon-based semiconducting materials and devices has made
encouraging progress. The strengths of semiconducting polymers are
currently mainly unfolding in cheap and easily assembled thin ?lm
transistors, light emitting diodes, and organic solar cells. The
use of so-called "plastic chips" ranges from lightweight, portable
devices over large-area applications to gadgets demanding a degree
of mechanical ?exibility, which would overstress
conventionaldevices based on inorganic,perfect crystals. The ?eld
of organic electronics has evolved quite dynamically during the
last few years; thus consumer electronics based on molecular
semiconductors has gained suf?cient market attractiveness to be
launched by the major manufacturers in the recent past.
Nonetheless, the numerous challenges related to organic device
physics and the physics of ordered and disordered molecular solids
are still the subjects of a cont- uing lively debate. The future of
organic microelectronics will unavoidably lead to new devi-
physical insights and hence to novel compounds and device
architectures of - hanced complexity. Thus, the early evolution of
predictive models and precise, computationally effective simulation
tools for computer-aided analysis and design of promising device
prototypes will be of crucial importance.
This volume contains the proceedings of the 12th International
Conference on Simulation of Semiconductor Processes and Devices,
SISPAD 2007, held September 2007 in Vienna, Austria. It provides a
global forum for the presentation and discussion of recent advances
and developments in the theoretical description, physical modeling
and numerical simulation and analysis of semiconductor fabrication
processes, device operation and system performance.
This book summarizes the state-of-the-art, regarding noise in
nanometer semiconductor devices. Readers will benefit from this
leading-edge research, aimed at increasing reliability based on
physical microscopic models. Authors discuss the most recent
developments in the understanding of point defects, e.g. via ab
initio calculations or intricate measurements, which have paved the
way to more physics-based noise models which are applicable to a
wider range of materials and features, e.g. III-V materials, 2D
materials, and multi-state defects. Describes the state-of-the-art,
regarding noise in nanometer semiconductor devices; Enables readers
to design more reliable semiconductor devices; Offers the most
up-to-date information on point defects, based on physical
microscopic models.
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