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Books > Science & Mathematics > Physics > States of matter > Plasma physics
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Novel Compound Semiconductor Nanowires - Materials, Devices, and Applications (Hardcover)
Loot Price: R3,249
Discovery Miles 32 490
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Novel Compound Semiconductor Nanowires - Materials, Devices, and Applications (Hardcover)
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One dimensional electronic materials are expected to be key
components owing to their potential applications in nanoscale
electronics, optics, energy storage, and biology. Besides, compound
semiconductors have been greatly developed as epitaxial growth
crystal materials. Molecular beam and metalorganic vapor phase
epitaxy approaches are representative techniques achieving 0D-2D
quantum well, wire, and dot semiconductor III-V heterostructures
with precise structural accuracy with atomic resolution. Based on
the background of those epitaxial techniques, high-quality,
single-crystalline III-V heterostructures have been achieved. III-V
Nanowires have been proposed for the next generation of nanoscale
optical and electrical devices such as nanowire light emitting
diodes, lasers, photovoltaics, and transistors. Key issues for the
realization of those devices involve the superior mobility and
optical properties of III-V materials (i.e., nitride-, phosphide-,
and arsenide-related heterostructure systems). Further, the
developed epitaxial growth technique enables electronic carrier
control through the formation of quantum structures and precise
doping, which can be introduced into the nanowire system. The
growth can extend the functions of the material systems through the
introduction of elements with large miscibility gap, or,
alternatively, by the formation of hybrid heterostructures between
semiconductors and another material systems. This book reviews
recent progresses of such novel III-V semiconductor nanowires,
covering a wide range of aspects from the epitaxial growth to the
device applications. Prospects of such advanced 1D structures for
nanoscience and nanotechnology are also discussed.
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