Amorphous and Crystalline Silicon Carbide and Related Materials - Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987 (Paperback, Softcover reprint of the original 1st ed. 1989)

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Springer Proceedings in Physics, 34
Release date:	2012
First published:	1989
Editors:	Gary L Harris • Cary Y. -W Yang
Dimensions:	244 x 170 x 11mm (L x W x T)
Format:	Paperback
Pages:	199
Edition:	Softcover reprint of the original 1st ed. 1989
ISBN-13:	978-3-642-93408-7
Categories:	Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids)
LSN:	3-642-93408-0
Barcode:	9783642934087

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