Silicon technology today forms the basis of a world-wide,
multi-billion dollar component industry. The reason for this
expansion can be found not only in the physical properties of
silicon but also in the unique properties of the silicon-silicon
dioxide interface. However, silicon devices are still subject to
undesired electrical phenomena called "instabilities." These are
due mostly to the imperfect nature of the insulators used, to the
not-so-perfect silicon-insulator interface and to the generation of
defects and ionization phenomena caused by radiation.
The problem of instabilities is addressed in this volume, the
third of this book series.
Vol.3 updates and supplements the material presented in the
previous two volumes, and devotes five chapters to the problems of
radiation-matter and radiation-device interactions. The volume will
aid circuit manufacturers and circuit users alike to relate
unstable electrical parameters and characteristics to the presence
of physical defects and impurities or to the radiation environment
which caused them.
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