Defects in SiO2 and Related Dielectrics: Science and Technology (Hardcover, 2000 ed.)

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

General

Imprint:	Springer
Country of origin:	Netherlands
Series:	NATO Science Series II: Mathematics, Physics and Chemistry, 2
Release date:	December 2000
First published:	2000
Editors:	Gianfranco Pacchioni • Linards Skuja • David L. Griscom
Dimensions:	235 x 155 x 34mm (L x W x T)
Format:	Hardcover
Pages:	624
Edition:	2000 ed.
ISBN-13:	978-0-7923-6685-0
Categories:	Books > Science & Mathematics > Physics > Electricity, magnetism & electromagnetism Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
LSN:	0-7923-6685-9
Barcode:	9780792366850

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