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Defects in SiO2 and Related Dielectrics: Science and Technology (Hardcover, 2000 ed.) Loot Price: R5,485
Discovery Miles 54 850
Defects in SiO2 and Related Dielectrics: Science and Technology (Hardcover, 2000 ed.): Gianfranco Pacchioni, Linards Skuja,...

Defects in SiO2 and Related Dielectrics: Science and Technology (Hardcover, 2000 ed.)

Gianfranco Pacchioni, Linards Skuja, David L. Griscom

Series: NATO Science Series II: Mathematics, Physics and Chemistry, 2

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Loot Price R5,485 Discovery Miles 54 850 | Repayment Terms: R514 pm x 12*

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Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

General

Imprint: Springer
Country of origin: Netherlands
Series: NATO Science Series II: Mathematics, Physics and Chemistry, 2
Release date: 2001
First published: 2000
Editors: Gianfranco Pacchioni • Linards Skuja • David L. Griscom
Dimensions: 235 x 155 x 34mm (L x W x T)
Format: Hardcover
Pages: 624
Edition: 2000 ed.
ISBN-13: 978-0-7923-6685-0
Categories: Books > Science & Mathematics > Physics > Electricity, magnetism & electromagnetism
Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
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LSN: 0-7923-6685-9
Barcode: 9780792366850

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