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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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Optical Characterization of Epitaxial Semiconductor Layers (Paperback, Softcover reprint of the original 1st ed. 1996)
Loot Price: R1,543
Discovery Miles 15 430
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Optical Characterization of Epitaxial Semiconductor Layers (Paperback, Softcover reprint of the original 1st ed. 1996)
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The characterization of epitaxial layers and their surfaces has
benefitted a lot from the enormous progress of optical analysis
techniques during the last decade. In particular, the dramatic
improvement of the structural quality of semiconductor epilayers
and heterostructures results to a great deal from the level of
sophistication achieved with such analysis techniques. First of
all, optical techniques are nondestructive and their sensitivity
has been improved to such an extent that nowadays the epilayer
analysis can be performed on layers with thicknesses on the atomic
scale. Furthermore, the spatial and temporal resolution have been
pushed to such limits that real time observation of surface
processes during epitaxial growth is possible with techniques like
reflectance difference spectroscopy. Of course, optical
spectroscopies complement techniques based on the inter action of
electrons with matter, but whereas the latter usually require high
or ultrahigh vacuum conditions, the former ones can be applied in
different environments as well. This advantage could turn out
extremely important for a rather technological point of view, i.e.
for the surveillance of modern semiconductor processes. Despite the
large potential of techniques based on the interaction of
electromagnetic waves with surfaces and epilayers, optical
techniques are apparently moving only slowly into this area of
technology. One reason for this might be that some prejudices still
exist regarding their sensitivity."
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