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Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids)
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Point Defects in Semiconductors I - Theoretical Aspects (Paperback, Softcover reprint of the original 1st ed. 1981)
Loot Price: R1,467
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Point Defects in Semiconductors I - Theoretical Aspects (Paperback, Softcover reprint of the original 1st ed. 1981)
Series: Springer Series in Solid-State Sciences, 22
Expected to ship within 10 - 15 working days
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From its early beginning before the war, the field of
semiconductors has developped as a classical example where the
standard approximations of 'band theory' can be safely used to
study its interesting electronic properties. Thus in these covalent
crystals, the electronic structure is only weakly coupled with the
atomic vibrations; one-electron Bloch functions can be used and
their energy bands can be accurately computed in the neighborhood
of the energy gap between the valence and conduction bands; nand p
doping can be obtained by introducing substitutional impurities
which only introduce shallow donors and acceptors and can be
studied by an effective-mass weak-scattering description. Yet, even
at the beginning, it was known from luminescence studies that these
simple concepts failed to describe the various 'deep levels'
introduced near the middle of the energy gap by strong localized
imperfections. These imperfections not only include some
interstitial and many substitutional atoms, but also 'broken bonds'
associated with surfaces and interfaces, dis location cores and
'vacancies', i.e., vacant iattice sites in the crystal. In all
these cases, the electronic structure can be strongly correlated
with the details of the atomic structure and the atomic motion.
Because these 'deep levels' are strongly localised,
electron-electron correlations can also playa significant role, and
any weak perturbation treatment from the perfect crystal structure
obviously fails. Thus, approximate 'strong coupling' techniques
must often be used, in line' with a more chemical de scription of
bonding."
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