Matching Properties of Deep Sub-Micron MOS Transistors examines
this interesting phenomenon. Microscopic fluctuations cause
stochastic parameter fluctuations that affect the accuracy of the
MOSFET. For analog circuits this determines the trade-off between
speed, power, accuracy and yield. Furthermore, due to the
down-scaling of device dimensions, transistor mismatch has an
increasing impact on digital circuits. The matching properties of
MOSFETs are studied at several levels of abstraction:
A simple and physics-based model is presented that accurately
describes the mismatch in the drain current. The model is
illustrated by dimensioning the unit current cell of a
current-steering D/A converter.
The most commonly used methods to extract the matching
properties of a technology are bench-marked with respect to model
accuracy, measurement accuracy and speed, and physical contents of
the extracted parameters.
The physical origins of microscopic fluctuations and how they
affect MOSFET operation are investigated. This leads to a
refinement of the generally applied 1/area law. In addition, the
analysis of simple transistor models highlights the physical
mechanisms that dominate the fluctuations in the drain current and
transconductance.
The impact of process parameters on the matching properties is
discussed.
The impact of gate line-edge roughness is investigated, which is
considered to be one of the roadblocks to the further down-scaling
of the MOS transistor.
Matching Properties of Deep Sub-Micron MOS Transistors is aimed
at device physicists, characterization engineers, technology
designers, circuit designers, or anybody else interested in the
stochastic properties of the MOSFET.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!