This book is devoted to the physics of electron-beam, ion-beam,
optical, and x-ray lithography. The need for this book results from
the following considerations. The astonishing achievements in
microelectronics are in large part connected with successfully
applying the relatively new technology of processing (changing the
prop erties of) a material into a device whose component dimensions
are submicron, called photolithography. In this method the device
is imaged as a pattern on a metal film that has been deposited onto
a transparent substrate and by means of a broad stream of light is
transferred to a semiconductor wafer within which the physical
structure of the devices and the integrated circuit connections are
formed layer by layer. The smallest dimensions of the device
components are limited by the diffraction of the light when the
pattern is transferred and are approximately the same as the
wavelength of the light. Photolithography by light having a
wavelength of A ~ 0.4 flm has made it possible to serially produce
integrated circuits having devices whose minimal size is 2-3 flm in
the 4 pattern and having 10-105 transistors per circuit.
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