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Advances in Solid State Circuit Technologies (Hardcover)
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Advances in Solid State Circuit Technologies (Hardcover)
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Solid-state transistors and integrated circuits has spawned the
information age in the last 50 years. Information is at people's
hands and communications take seconds. Such rapid development stems
from tremendous developments in both hardware and software such as
solid-state circuits. Approaches such as parallel processing, new
circuit design, and particularly novel materials are necessary.
Advances in Solid State Circuit Technologies provides concepts and
current improvements of circuit technology. The applications of
solid state in circuit's elements go from simple led technology to
complex transistors and chips. The advances take the new
technologies to smaller sizes and faster operations. First chapter
presents fault diagnosis of DC analog CMOS circuits and second
chapter explores on high-accuracy function synthesizer circuit with
applications in signal processing. Third chapter provides a new
current-controlled-power technique for small signal applications.
In fourth chapter, a design of a symmetry-type floating impedance
scaling circuit and the improvement method of its operation
bandwidth are proposed. Fifth chapter elaborates on the design and
analysis of a power efficient linearly tunable cross-coupled
transconductor having separate bias control, and sixth chapter
presents a novel and unique polymorphic processor design. In
seventh chapter, the differential ULV inverter is presented. The
improvement in term of stability and delay relative to the ULV is
elaborated. Furthermore, the reliability, yield and the defect
tolerance of the differential ULV inverter compared with both
standards CMOS and with ULV floating-gate inverter are examined.
Chip design of a low-voltage wideband continuous-time sigma-delta
modulator with DWA technology for WIMAX applications are
highlighted in eighth chapter. Ninth chapter introduces the system
architecture of the wideband continuous-time sigma-delta modulator
and ninth chapter presents the design of a novel two-stage
bulk-input pseudo differential Operational Transconductance
Amplifier. Tenth chapter explores on the performance improvement of
phase-change memory cell using AlSb3Te and atomic layer deposition
TiO2 buffer layer and eleventh chapter highlights emerging
nonvolatile memory technologies. Probe-based storage technologies
are illustrated in twelfth chapter and thirteenth chapter presents
a comparative analysis result of the proposed scheme and the
conventional thyristor protection scheme incorporating a clamp NMOS
device. Fourteenth chapter presents a CMOS 3.1 - 10.6 GHZ UWB LNA
employing modified derivative superposition method. In fifteenth
chapter, the challenges and opportunities of CBRAM devices using
different switching materials such as chalcogenides, oxides, and
bilayers in different structures have been reviewed. In sixteenth
chapter, we focus our attention on the recent development of the
research on the QC effect in CF-based non-volatile RS devices
including basic QC phenomenon in resistive random access memory
(RRAM), RS mechanisms, device structures, materials, theory, and
modeling of conductance quantization in RRAM. In seventeenth
chapter, we report on electrical instabilities in pentacene-based
transistors with Mylar and PMMA/Mylar gate dielectrics transferred
by a lamination process in ambient environment. Special emphasis is
given on comparing the two types of devices in ON state and
subthreshold regions under gate bias stress. Eighteenth chapter
presents an introduction of memristor and modelling of memristor
with nonlinear dopant drift with new parameter. Ninteenth chapter
focuses on canning head for the apertureless near field optical
microscope and measurement of gamma-rays using smartphones is
highlighted in twentieth chapter. Last chapter presents an approach
on design of low power level shifter circuit with sleep transistor
using multisupply voltage scheme. These chapters contain
applications, written by renowned experts in the respective fields
on to integrated circuits and materials science. It is intended for
a broad readership which includes electrical engineers and material
scientists. Readers will be able to familiarize themselves with the
latest technologies in the various fields.
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