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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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Fowler-Nordheim Field Emission - Effects in Semiconductor Nanostructures (Hardcover, 2012)
Loot Price: R4,538
Discovery Miles 45 380
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Fowler-Nordheim Field Emission - Effects in Semiconductor Nanostructures (Hardcover, 2012)
Series: Springer Series in Solid-State Sciences, 170
Expected to ship within 10 - 15 working days
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This monograph solely presents the Fowler-Nordheim field emission
(FNFE) from semiconductors and their nanostructures. The materials
considered are quantum confined non-linear optical, III-V, II-VI,
Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP,
Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe
superlattices with graded interfaces and effective mass
superlattices under magnetic quantization and quantum wires of the
aforementioned superlattices. The FNFE in opto-electronic materials
and their quantum confined counterparts is studied in the presence
of light waves and intense electric fields on the basis of newly
formulated electron dispersion laws that control the studies of
such quantum effect devices. The importance of band gap
measurements in opto-electronic materials in the presence of
external fields is discussed from this perspective. This monograph
contains 200 open research problems which form the very core and
are useful for Ph. D students and researchers. The book can also
serve as a basis for a graduate course on field emission from
solids.
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