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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces (Paperback, 2011 ed.)
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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces (Paperback, 2011 ed.)
Series: Springer Theses
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This thesis presents results from a combined atomic-resolution
Z-contrast and annular bright-field imaging and electron energy
loss spectroscopy in the Scanning Transmission Electron Microscopy,
as well as first principles studies of the interfaces between
crystalline Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2
intergranular film (IGF). These interfaces are of a great
fundamental and technological interest because they play an
important role in the microstructural evolution and mechanical
properties of Si3N4 ceramics used in many high temperature and
pressure applications. The main contribution of this work is its
detailed description of the bonding characteristics of light atoms,
in particular oxygen and nitrogen, at these interfaces, which has
not been achieved before. The atomic-scale information on the
arrangement of both light and heavy atoms is critical for realistic
modeling of interface properties, such as interface strength and
ion transport, and will facilitate increased control over the
performance of ceramic and semiconductor materials for a wide-range
of applications.
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