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Focussing on micro- and nanoelectronics design and technology, this
book provides thorough analysis and demonstration, starting from
semiconductor devices to VLSI fabrication, designing (analog and
digital), on-chip interconnect modeling culminating with emerging
non-silicon/ nano devices. It gives detailed description of both
theoretical as well as industry standard HSPICE, Verilog, Cadence
simulation based real-time modeling approach with focus on
fabrication of bulk and nano-devices. Each chapter of this proposed
title starts with a brief introduction of the presented topic and
ends with a summary indicating the futuristic aspect including
practice questions. Aimed at researchers and senior
undergraduate/graduate students in electrical and electronics
engineering, microelectronics, nanoelectronics and nanotechnology,
this book: Provides broad and comprehensive coverage from
Microelectronics to Nanoelectronics including design in analog and
digital electronics. Includes HDL, and VLSI design going into the
nanoelectronics arena. Discusses devices, circuit analysis, design
methodology, and real-time simulation based on industry standard
HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs
(TFETs) and CNTFETs including their circuit co-designing. Covers
real time illustration using industry standard Verilog, Cadence and
Synopsys simulations.
Focussing on micro- and nanoelectronics design and technology, this
book provides thorough analysis and demonstration, starting from
semiconductor devices to VLSI fabrication, designing (analog and
digital), on-chip interconnect modeling culminating with emerging
non-silicon/ nano devices. It gives detailed description of both
theoretical as well as industry standard HSPICE, Verilog, Cadence
simulation based real-time modeling approach with focus on
fabrication of bulk and nano-devices. Each chapter of this proposed
title starts with a brief introduction of the presented topic and
ends with a summary indicating the futuristic aspect including
practice questions. Aimed at researchers and senior
undergraduate/graduate students in electrical and electronics
engineering, microelectronics, nanoelectronics and nanotechnology,
this book: Provides broad and comprehensive coverage from
Microelectronics to Nanoelectronics including design in analog and
digital electronics. Includes HDL, and VLSI design going into the
nanoelectronics arena. Discusses devices, circuit analysis, design
methodology, and real-time simulation based on industry standard
HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs
(TFETs) and CNTFETs including their circuit co-designing. Covers
real time illustration using industry standard Verilog, Cadence and
Synopsys simulations.
The Department of Electronics and Communication Engineering of KIET
Group of Institutions, Delhi-NCR organized the 4th International
Conference ICCE-2020 during November 28-29, 2020. Information
compiled in this book is based on the 114 research papers of
excellent quality covering different domains of Electronics and
Communication Engineering, Computer Science Engineering,
Information Technology, Electrical Engineering, Electronics and
Instrumentation Engineering. The subject areas treated in the book
are: Satellite, Radar and Microwave Techniques, Secure, Smart, and
Reliable Networks, Next Generation Networks, Devices &
Circuits, Signal & Image Processing, New Emerging Technologies,
having the central focus on Recent Trends in Communication &
Electronics (ICCE-2020). In addition, a few themes based on Special
Sessions have also been conducted in ICCE-2020. The objective of
the book resulting from the 4th International Conference on Recent
Trends in Communication & Electronics (ICCE-2020) is to provide
a resource for the study and research work for an interested
audience comprising of researchers, students, audience, and
practitioners in the areas of Communications & Computing
Systems.
Recent advances in semiconductor technology offer vertical
interconnect access (via) that extend through silicon, popularly
known as through silicon via (TSV). This book provides a
comprehensive review of the theory behind TSVs while covering most
recent advancements in materials, models and designs. Furthermore,
depending on the geometry and physical configurations, different
electrical equivalent models for Cu, carbon nanotube (CNT) and
graphene nanoribbon (GNR) based TSVs are presented. Based on the
electrical equivalent models the performance comparison among the
Cu, CNT and GNR based TSVs are also discussed.
This book focusses on the spacer engineering aspects of novel
MOS-based device-circuit co-design in sub-20nm technology node, its
process complexity, variability, and reliability issues. It
comprehensively explores the FinFET/tri-gate architectures with
their circuit/SRAM suitability and tolerance to random statistical
variations.
Text provides information about advanced OTFT (Organic thin film
transistor) structures, their modeling and extraction of
performance parameters, materials of individual layers, their
molecular structures, basics of pi-conjugated semiconducting
materials and their properties, OTFT charge transport phenomena and
fabrication techniques. It includes applications of OTFTs such as
single and dual gate OTFT based inverter circuits along with
bootstrap techniques, SRAM cell designs based on different material
and circuit configurations, light emitting diodes (LEDs). Besides
this, application of dual gate OTFT in the logic gate, shift
register, Flip-Flop, counter circuits will be included as well.
This book focusses on the spacer engineering aspects of novel
MOS-based device-circuit co-design in sub-20nm technology node, its
process complexity, variability, and reliability issues. It
comprehensively explores the FinFET/tri-gate architectures with
their circuit/SRAM suitability and tolerance to random statistical
variations.
The primary aim of this book is to discuss various aspects of
nanoscale device design and their applications including transport
mechanism, modeling, and circuit applications. . Provides a
platform for modeling and analysis of state-of-the-art devices in
nanoscale regime, reviews issues related to optimizing the
sub-nanometer device performance and addresses simulation aspect
and/or fabrication process of devices Also, includes design
problems at the end of each chapter
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VLSI Design and Test - 21st International Symposium, VDAT 2017, Roorkee, India, June 29 - July 2, 2017, Revised Selected Papers (Paperback, 1st ed. 2017)
Brajesh Kumar Kaushik, Sudeb Dasgupta, Virendra Singh
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R3,129
Discovery Miles 31 290
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Ships in 10 - 15 working days
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This book constitutes the refereed proceedings of the 21st
International Symposium on VLSI Design and Test, VDAT 2017, held in
Roorkee, India, in June/July 2017. The 48 full papers presented
together with 27 short papers were carefully reviewed and selected
from 246 submissions. The papers were organized in topical sections
named: digital design; analog/mixed signal; VLSI testing; devices
and technology; VLSI architectures; emerging technologies and
memory; system design; low power design and test; RF circuits;
architecture and CAD; and design verification.
This book offers detailed insights into spin transfer torque (STT)
based devices, circuits and memories. Starting with the basic
concepts and device physics, it then addresses advanced STT
applications and discusses the outlook for this cutting-edge
technology. It also describes the architectures, performance
parameters, fabrication, and the prospects of STT based devices.
Further, moving from the device to the system perspective it
presents a non-volatile computing architecture composed of STT
based magneto-resistive and all-spin logic devices and demonstrates
that efficient STT based magneto-resistive and all-spin logic
devices can turn the dream of instant on/off non-volatile computing
into reality.
The brief primarily focuses on the performance analysis of CNT
based interconnects in current research scenario. Different CNT
structures are modeled on the basis of transmission line theory.
Performance comparison for different CNT structures illustrates
that CNTs are more promising than Cu or other materials used in
global VLSI interconnects. The brief is organized into five
chapters which mainly discuss: (1) an overview of current research
scenario and basics of interconnects; (2) unique crystal structures
and the basics of physical properties of CNTs, and the production,
purification and applications of CNTs; (3) a brief technical
review, the geometry and equivalent RLC parameters for different
single and bundled CNT structures; (4) a comparative analysis of
crosstalk and delay for different single and bundled CNT
structures; and (5) various unique mixed CNT bundle structures and
their equivalent electrical models.
The primary aim of this book is to discuss various aspects of
nanoscale device design and their applications including transport
mechanism, modeling, and circuit applications. . Provides a
platform for modeling and analysis of state-of-the-art devices in
nanoscale regime, reviews issues related to optimizing the
sub-nanometer device performance and addresses simulation aspect
and/or fabrication process of devices Also, includes design
problems at the end of each chapter
Nanoelectronics: Devices, Circuits and Systems explores current and
emerging trends in the field of nanoelectronics, from both a
devices-to-circuits and circuits-to-systems perspective. It covers
a wide spectrum and detailed discussion on the field of
nanoelectronic devices, circuits and systems. This book presents an
in-depth analysis and description of electron transport phenomenon
at nanoscale dimensions. Both qualitative and analytical approaches
are taken to explore the devices, circuit functionalities and their
system applications at deep submicron and nanoscale levels. Recent
devices, including FinFET, Tunnel FET, and emerging materials,
including graphene, and its applications are discussed. In
addition, a chapter on advanced VLSI interconnects gives clear
insight to the importance of these nano-transmission lines in
determining the overall IC performance. The importance of
integration of optics with electronics is elucidated in the
optoelectronics and photonic integrated circuit sections of this
book. This book provides valuable resource materials for scientists
and electrical engineers who want to learn more about nanoscale
electronic materials and how they are used.
Recent advances in semiconductor technology offer vertical
interconnect access (via) that extend through silicon, popularly
known as through silicon via (TSV). This book provides a
comprehensive review of the theory behind TSVs while covering most
recent advancements in materials, models and designs. Furthermore,
depending on the geometry and physical configurations, different
electrical equivalent models for Cu, carbon nanotube (CNT) and
graphene nanoribbon (GNR) based TSVs are presented. Based on the
electrical equivalent models the performance comparison among the
Cu, CNT and GNR based TSVs are also discussed.
Text provides information about advanced OTFT (Organic thin film
transistor) structures, their modeling and extraction of
performance parameters, materials of individual layers, their
molecular structures, basics of pi-conjugated semiconducting
materials and their properties, OTFT charge transport phenomena and
fabrication techniques. It includes applications of OTFTs such as
single and dual gate OTFT based inverter circuits along with
bootstrap techniques, SRAM cell designs based on different material
and circuit configurations, light emitting diodes (LEDs). Besides
this, application of dual gate OTFT in the logic gate, shift
register, Flip-Flop, counter circuits will be included as well.
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Discovery Miles 3 300
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