The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.

In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime.

This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.

The progression developed in this book is essential to understand new test methodologies, algorithms and industrial practices. Without the insight into the physics of nano-metric technologies, it would be hard to develop system-level test strategies that yield a high IC fault coverage. Obviously, the work on defect-oriented testing presented in the book is not final, and it is an evolving field with interesting challenges imposed by the ever-changing nature of nano-metric technologies. Test and design practitioners from academia and industry will find that Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits lays the foundations for further pioneering work.

ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.

ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing. Proper thermal management is the key to achieve high performance, quality and reliability. Performance and reliability of integrated circuits are strong functions of the junction temperature. A small increase in junction temperature may result in significant reduction in the device lifetime.

This book reviews the significance of the junction temperature as a reliability measure under nominal and burn-in conditions. The latest research in the area of electro-thermal modeling of integrated circuits will also be presented. Recent models and associated CAD tools are covered and various techniques at the circuit and system levels are reviewed. Subsequently, the authors provide an insight into the concept of thermal runaway and how it may best be avoided. A section on low temperature operation of integrated circuits concludes the book.

The 2nd edition of defect oriented testing has been extensively updated. New chapters on Functional, Parametric Defect Models and Inductive fault Analysis and Yield Engineering have been added to provide a link between defect sources and yield. The chapter on RAM testing has been updated with focus on parametric and SRAM stability testing. Similarly, newer material has been incorporated in digital fault modeling and analog testing chapters. The strength of Defect Oriented Testing for nano-Metric CMOS VLSIs lies in its industrial relevance.