The first part of this monograph presents theoretical analysis of the thermophysical properties of strongly coupled coulomb systems. A new model is then developed, making it possible to calculate the full set of low temperature, multicomponent, nonideal plasma transport coefficients, based on the kinetic coefficients of strongly coupled coulomb systems and experimental data for the transport coefficients of Dense, Low temperature plasmas. This model can easily be implemented in the form of a set of computer algorithms, and the third part of the book shows how it can be used to solve important problems of high temperature gas dynamics, for example, heat and mass transfer in the shock layer of a space probe, stability of temperature and concentration fields in gas phase nuclear reactors, and critical phenomena in low temperature plasma dynamics.

Providing a systematic and self-contained treatment of excitation, propagation and re- emission of electromagnetic waves guided by density ducts in magnetized plasmas, this book describes in detail the theoretical basis of the electrodynamics of ducts. The classical dielectric-waveguide theory in open guiding systems in magnetoplasma is subjected to rigorous generalization. The authors emphasize the conceptual physical and mathematical aspects of the theory, while demonstrating its applications to problems encountered in actual practice.
The opening chapters of the book discuss the underlying physical phenomena, outline some of the results obtained in natural and artificial density ducts, and describe the basic theory crucial to understanding the remainder of the book. The more specialized and complex topics dealt with in subsequent chapters include the theory of guided wave propagation along axially uniform ducts, finding the field excited by the source in the presence of a duct, excitation of guided modes, the asymptotic theory of wave propagation along axially nonuniform ducts, and mode re-emission from a duct.
The full wave theory is used throughout most of the book to ensure consistency, and the authors start with simpler cases and gradually increase the complexity of the treatment.

This book is a collection of invited papers (previously published in special issues of the Journal of Adhesion Science and Technology) written by internationally recognized researchers actively working in the field of plasma surface modification. It provides a current, comprehensive overview of the plasma treatment of polymers.
In contrast to plasma polymerization, plasma surface modification reactions do not cause thin-film deposition, and can therefore only modify the surface properties of organic substrates. Plasma surface modifications are fast, efficient methods for improving the adhesion properties and other surface characteristics of a variety of polymeric materials.
The focus of this volume is on adhesion phenomena, surface properties and the surface characterization of plasma-treated materials. This book opens with a critical review of the plasma surface modification of polymers for improved adhesion. The remainder of the papers are divided into two sections, one dealing with the characterization of plasma-treated surfaces and the second concerned with various practical applications of plasma-treated surfaces

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D-2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.