The aim is to give an overview of the physics of extended
defects in Germanium, i.e. dislocations (line defects), grain
boundaries, stacking faults, twins and {311} defects
(two-dimensional defects) and precipitates, bubbles, etc. The first
part covers fundamentals, describing the crystallographic structure
and other physical and electrical properties, mainly of
dislocations. Since dislocations are essential for the plastic
deformation of Germanium, methods for analysis and imaging of
dislocations and to evaluate their structure are described.
Attention is given to the electrical and optical properties, which
are important for devices made in dislocated Ge. The second part
treats the creation of extended defects during wafer and device
processing. Issues are addressed such as defect formation during
ion implantation, necessary to create junctions, which are an
essential part in every device type. Extended defects are also
created during the deposition of thin or thick epitaxial layers on
other substrates, which are important for optoelectronic and
photovoltaic applications. In brief, the book is intended to
provide a fundamental understanding of the extended-defect
formation during Ge materials and device processing, providing ways
to distinguish harmful from less detrimental defects and should
point out ways for defect engineering and control.
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