Fabrication & Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications (Paperback)

Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.

General

Imprint:	nova science publishers
Country of origin:	United States
Release date:	April 2012
First published:	April 2012
Authors:	Pham Huynh Tram • Yoon Soon Fatt • Lim Kim Peng
Dimensions:	155 x 230 x 8mm (L x W x T)
Format:	Paperback
ISBN-13:	978-1-62100-940-5
Categories:	Books > Science & Mathematics > Chemistry > Analytical chemistry > Qualitative analytical chemistry > Chemical spectroscopy, spectrochemistry > General
LSN:	1-62100-940-8
Barcode:	9781621009405

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