This book deals with the Effective Electron Mass (EEM) in low
dimensional semiconductors. The materials considered are quantum
confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2,
zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te,
II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized
III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded
interfaces and effective mass superlattices. The presence of
intense electric field and the light waves change the band
structure of optoelectronic semiconductors in fundamental ways,
which have also been incorporated in the study of the EEM in
quantized structures of optoelectronic compounds that control the
studies of the quantum effect devices under strong fields. The
importance of measurement of band gap in optoelectronic materials
under strong electric field and external photo excitation has also
been discussed in this context. The influence of crossed electric
and quantizing magnetic fields on the EEM and the EEM in heavily
doped semiconductors and their nanostructures is discussed. This
book contains 200 open research problems which form the integral
part of the text and are useful for both Ph. D aspirants and
researchers in the fields of solid-state sciences, materials
science, nanoscience and technology and allied fields in addition
to the graduate courses in modern semiconductor nanostructures. The
book is written for post graduate students, researchers and
engineers, professionals in the fields of solid state sciences,
materials science, nanoscience and technology, nanostructured
materials and condensed matter physics.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!