What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else's SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment's reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

We are in the swirling center of the most life-changing technological revolution the Earth has ever known. In only 60 years, an eye-blink of human history, a single technological invention has launched the proverbial thousand ships, producing the most sweeping and pervasive set of changes ever to wash over humankind; changes that are reshaping the very core of human existence, on a global scale, at a relentlessly accelerating pace. And we are just at the very beginning. Silicon Earth introduces readers with little or no background to the many marvels of microelectronics and nanotechnology, using easy, non-intimidating language, with an intuitive approach using minimal math. The general scientific and engineering underpinnings of microelectronics and nanotechnology are addressed, as well as how this new technological revolution is transforming a broad array of interdisciplinary fields, and civilization as a whole. Special 'widget deconstruction' chapters address the inner workings of ubiquitous micro/nano-enabled pieces of technology such as cell phones, flash drives, GPS, DVDs, and digital cameras.

Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world's foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

We are in the center of the most life-changing technological revolution the Earth has ever known. In little more than 65 years, an eye-blink in human history, a single technological invention has launched the proverbial thousand ships, producing the most sweeping and pervasive set of changes ever to wash over humankind; changes that are reshaping the very core of human existence, on a global scale, at a relentlessly accelerating pace. And we are just at the very beginning. Silicon Earth: Introduction to Microelectronics and Nanotechnology introduces readers with little or no technical background to the marvels of microelectronics and nanotechnology, using straightforward language, an intuitive approach, minimal math, and lots of pictures. The general scientific and engineering underpinnings of microelectronics and nanotechnology are described, as well as how this new technological revolution is transforming a broad array of interdisciplinary fields, and civilization as a whole. Special "widget deconstruction" chapters address the inner workings of ubiquitous micro/nano-enabled pieces of technology, such as smartphones, flash drives, and digital cameras. Completely updated and upgraded to full color, the Second Edition: Includes new material on the design of electronic systems, the future of electronics, and the societal impact of micro/nanotechnology Provides new widget deconstructions of cutting-edge tech gadgets like the GPS-enabled smartwatch Adds end-of-chapter study questions and hundreds of new color photos Silicon Earth: Introduction to Microelectronics and Nanotechnology, Second Edition is a pick-up-and-read-cover-to-cover book for those curious about the micro/nanoworld, as well as a classroom-tested, student-and-professor-approved text ideal for an undergraduate-level university course. Lecture slides, homework examples, a deconstruction project

We are in the center of the most life-changing technological revolution the Earth has ever known. In little more than 65 years, an eye-blink in human history, a single technological invention has launched the proverbial thousand ships, producing the most sweeping and pervasive set of changes ever to wash over humankind; changes that are reshaping the very core of human existence, on a global scale, at a relentlessly accelerating pace. And we are just at the very beginning. Silicon Earth: Introduction to Microelectronics and Nanotechnology introduces readers with little or no technical background to the marvels of microelectronics and nanotechnology, using straightforward language, an intuitive approach, minimal math, and lots of pictures. The general scientific and engineering underpinnings of microelectronics and nanotechnology are described, as well as how this new technological revolution is transforming a broad array of interdisciplinary fields, and civilization as a whole. Special "widget deconstruction" chapters address the inner workings of ubiquitous micro/nano-enabled pieces of technology, such as smartphones, flash drives, and digital cameras. Completely updated and upgraded to full color, the Second Edition: Includes new material on the design of electronic systems, the future of electronics, and the societal impact of micro/nanotechnology Provides new widget deconstructions of cutting-edge tech gadgets like the GPS-enabled smartwatch Adds end-of-chapter study questions and hundreds of new color photos Silicon Earth: Introduction to Microelectronics and Nanotechnology, Second Edition is a pick-up-and-read-cover-to-cover book for those curious about the micro/nanoworld, as well as a classroom-tested, student-and-professor-approved text ideal for an undergraduate-level university course. Lecture slides, homework examples, a deconstruction project, and discussion threads are available via an author-maintained website.

Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world's foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

We are in the swirling center of the most life-changing technological revolution the Earth has ever known. In only 60 years, an eye-blink of human history, a single technological invention has launched the proverbial thousand ships, producing the most sweeping and pervasive set of changes ever to wash over humankind; changes that are reshaping the very core of human existence, on a global scale, at a relentlessly accelerating pace. And we are just at the very beginning. Silicon Earth introduces readers with little or no background to the many marvels of microelectronics and nanotechnology, using easy, non-intimidating language, with an intuitive approach using minimal math. The general scientific and engineering underpinnings of microelectronics and nanotechnology are addressed, as well as how this new technological revolution is transforming a broad array of interdisciplinary fields, and civilization as a whole. Special 'widget deconstruction' chapters address the inner workings of ubiquitous micro/nano-enabled pieces of technology such as cell phones, flash drives, GPS, DVDs, and digital cameras.

At the cusp of the last century, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Significantly revised, revamped, and updated to keep pace with the most dynamic field in engineering, this second edition has expanded to 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is still the most up-to-date, reliable, and comprehensive source for real answers to practical problems. The emphasis remains on the fundamental theory underlying professional applications, and new sections reflect recent areas of industrial and research focus. WHAT'S NEW IN THE SECOND EDITION? New Sections on... -Low-power electronics and design -VLSI signal processing New Chapters on... -CMOS fabrication -Content-addressable memory -Compound semiconductor RF circuits -High-speed circuit design principles Completely Revised Chapters and Sections on... -SiGe HBT technology -Bipolar junction transistor amplifiers -Performance modeling and analysis using SystemC -Design languages, expanded from two chapters to twelve -Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.