This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.

This monograph examines James Clerk Maxwell's contributions to electromagnetism to gain insight into the practice of science by focusing on scientific methodology as applied by scientists. First and foremost, this study is concerned with practices that are reflected in scientific texts and the ways scientists frame their research. The book is therefore about means and not ends.

This volume on Ultrafast Magnetism is a collection of articles presented at the international "Ultrafast Magnetization Conference" held at the Congress Center in Strasbourg, France, from October 28th to November 1st, 2013. This first conference, which is intended to be held every two years, received a wonderful attendance and gathered scientists from 27 countries in the field of Femtomagnetism, encompassing many theoretical and experimental research subjects related to the spins dynamics in bulk or nanostructured materials. The participants appreciated this unique opportunity for discussing new ideas and debating on various physical interpretations of the reported phenomena. The format of a single session with many oral contributions as well as extensive time for poster presentations allowed researchers to have a detailed overview of the field. Importantly, one could sense that, in addition to studying fundamental magnetic phenomena, ultrafast magnetism has entered in a phase where applied physics and engineering are playing an important role. Several devices are being proposed with exciting R&D perspectives in the near future, in particular for magnetic recording, time resolved magnetic imaging and spin polarized transport, therefore establishing connections between various aspects of modern magnetism. Simultaneously, the diversity of techniques and experimental configurations has flourished during the past years, employing in particular Xrays, visible, infra-red and terahertz radiations. It was also obvious that an important effort is being made for tracking the dynamics of spins and magnetic domains at the nanometer scale, opening the pathway to exciting future developments. The concerted efforts between theoretical and experimental approaches for explaining the dynamical behaviors of angular momentum and energy levels, on different classes of magnetic materials, are worth pointing out. Finally it was unanimously recognized that the quality of the scientific oral and poster presentations contributed to bring the conference to a very high international standard.

In general, a dielectric is considered as a non-conducting or insulating material (such as a ceramic or polymer used to manufacture a microelectronic device). This book describes the laws governing all dielectric phenomena.
.A unified approach is used in describing each of the dielectric phenomena, with the aim of answering "what?," "how?" and "why" for the occurrence of each phenomenon;
.Coverage unavailable in other books on ferroelectrics, piezoelectrics, pyroelectrics, electro-optic processes, and electrets;
.Theoretical analyses are general and broadly applicable;
.Mathematics is simplified and emphasis is placed on the physical insight of the mechanisms responsible for the phenomena;
.Truly comprehensive coverage not available in the current literature.

The papers published in this volume were presented at the Second International Conference on Ultra-WidebandiShort-Pulse (UWB/SP) Electromagnetics, ApriIS-7, 1994. To place this second international conference in proper perspective with respect to the first conference held during October 8-10, 1992, at Polytechnic University, some background information is necessary. As we had hoped, the first conference struck a responsive cord, both in timeliness and relevance, among the electromagnetic community 1. Participants at the first conference already inquired whether and when a follow-up meeting was under consideration. The first concrete proposal in this direction was made a few months after the first conference by Prof. A. Terzuoli of the Air Force Institute of Technology (AFIT), Dayton, Ohio, who has been a strong advocate of time-domain methods and technologies. He initially proposed a follow-up time-domain workshop under AFIT auspices. Realizing that interest in this subject is lodged also at other Air Force installations, we suggested to enlarge the scope, and received in this endeavor the support of Dr. A. Nachman of AFOSR (Air Force Office of Scientific Research), Bolling Air Force Base, Washington, D.C.

Radar-based imaging of aircraft targets is a topic that continues to attract a lot of attention, particularly since these imaging methods have been recognized to be the foundation of any successful all-weather non-cooperative target identification technique. Traditional books in this area look at the topic from a radar engineering point of view. Consequently, the basic issues associated with model error and image interpretation are usually not addressed in any substantive fashion. Moreover, applied mathematicians frequently find it difficult to read the radar engineering literature because it is jargon-laden and device specific, meaning that the skills most applicable to the problem's solution are rarely applied. Enabling an understanding of the subject and its current mathematical research issues, Radar Imaging of Airborne Targets: A Primer for Applied Mathematicians and Physicists presents the issues and techniques associated with radar imaging from a mathematical point of view rather than from an instrumentation perspective. The book concentrates on scattering issues, the inverse scattering problem, and the approximations that are usually made by practical algorithm developers. The author also explains the consequences of these approximations to the resultant radar image and its interpretation, and examines methods for reducing model-based error.

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts."

This book emphasizes the role that electron interactions play in the properties of condensed matter. It teaches the use of the powerful nonperturbative techniques that have become available in the last decades to discuss such topics as mixed valence systems, Kondo systems, heavy electrons, high-temperature copper oxide superconductors, the quantum Hall effect, and low-dimensional isotropic magnets. Mathematical derivations are self contained. Appendices provide standard many-body tools including second quantization, Grassmann variables, generating functionals, linear response, correlation functions, Fermi and Bose coherent-states path integrals, Matsubara representation, and the method of steepest descents. There are guided bibliographies and exercises at the end of each chapter.

One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.

When the first edition of "Optical Interferometry" was published, interferometry was regarded as a rather esoteric method of making measurements, largely confined to the laboratory. Today, however, besides its use in several fields of research, it has applications in fields as diverse as measurement of length and velocity, sensors for rotation, acceleration, vibration and electrical and magnetic fields, as well as in microscopy and nanotechnology.

Most topics are discussed first at a level accessible to anyone with a basic knowledge of physical optics, then a more detailed treatment of the topic is undertaken, and finally each topic is supplemented by a reference list of more than 1000 selected original publications in total.
* Historical development of interferometry
* The laser as a light source
* Two-beam interference
* Techniques for frequency stabilization
* Coherence
* Electronic phase measurements
* Multiple-beam interference
* Quantum effects in optical interference
* Extensive coverage of the applications of interferometry, such as measurements of length, optical testing, interference microscopy, interference spectroscopy, Fourier-transform spectroscopy, interferometric sensors, nonlinear interferometers, stellar interferometry, and studies of space-time and gravitation.

Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.

The book proposed to the readers' attention represents an attempt to state and systematize extensive material of our experimental and theoretical investigations of heteromagnetic interactions in ferrite semiconductor structures of the active type carried out at the department of general physics, Saratov State University named after N.G. Chernyshevskiyandin the Design of ceof critical technologies(DO CT) of SRI-Tantal Corp. of the Holding company "Tantal" in recent years. The novelty and complexity of the physical phenomena determined the high-technologychar- ter ofourinvestigationsat the jointof someleads- semiconductormicroelectronics, microcircuitry, radio engineering, radiophysics, physics of magnetic phenomena, magnetoelectronics. Accumulation of extensive theoretical and experimental material on mag- toelectronics of the microwave and EHF-ranges, investigations on bigyrotropic microelectronics in ferrite lms and structures on their basis, decisive experiments con rming the multifunctionality of interactions in ferrite semiconductor structures of the active type have determined the new lead being promising. The results of our physical investigations of multifunctional, multiparametric interactions in ferrite semiconductorstructures of the active type - (oscillators, c- verters, ampli ers, frequencysynthesizers, and sensors) in the radio-wave range are discussed in the book. Performance of such a great volume of investigations became possible by jo- ing the efforts of leading experts and scientists of Saratov State University, leading industrial enterprises of Russia in the spheres of semiconductor microelectr- ics manufacturing, development of microcontrollers, radioelectronic systems, and ferrites.

The research on gaseous electronics reaches back more than 100 years. With the growing importance of gas lasers in so many research and industrial applications as well as power systems generating, transmitting, and distributing huge blocks of electrical power, the body of literature on cross sections, drift and diffusion, and ionization phenomena continues to bloom. Searching through this vast expanse of data is a daunting and time-consuming task. With this in mind, eminent researcher Gorur Govinda Raju presents an authoritative survey of the ballooning literature on gaseous electrical discharge. Gaseous Electronics: Theory and Practice begins with an overview of the physics underlying the collisions involved in discharge, scattering, ion mobilities, and the various cross-sections and relations between them. A discussion follows on experimental techniques used to measure collision cross-sections, covering the techniques related to the data presented in later chapters. In an unprecedented collection of data and analysis, the author supplies comprehensive cross-sections for rare gases such as Argon, Helium, Krypton, and Xenon; various diatomics; and complex molecules and industrial gases including hydrocarbons. He further includes discussions and analyses on drift and diffusion of electrons, ionization coefficients, attachment coefficients, high-voltage phenomena, and high-frequency discharges. Based on more than 40 years of experience in the field, Gaseous Electronics: Theory and Practice places a comprehensive collection of data together with theory and modern practice in a single, concise reference.

The state-of-the-art of quantum transport and quantum kinetics in semiconductors, plus the latest applications, are covered in this monograph. Since the publishing of the first edition in 1996, the nonequilibrium Green function technique has been applied to a large number of new research topics, and the revised edition introduces the reader to many of these areas. This book is both a reference work for researchers and a self-tutorial for graduate students.

Ferroic materials are important, not only because of the improved understanding of condensed matter, but also because of their present and potential device applications. This book presents a unified description of ferroic materials at an introductory level, with the unifying factor being the occurrence of nondisruptive phase transitions in crystals that alter point-group symmetry. The book also aims to further systemitize the subject of ferroic materials, employing some formal, carefully worded, definitions and classification schemes. The basic physical principles leading to the wide-ranging applications of ferroic materials are also explained, while placing extra emphasis on the utilitarian role of symmetry in materials science.

The story of two brilliant nineteenth-century scientists who discovered the electromagnetic field, laying the groundwork for the amazing technological and theoretical breakthroughs of the twentieth century
Two of the boldest and most creative scientists of all time were Michael Faraday (1791-1867) and James Clerk Maxwell (1831-1879). This is the story of how these two men - separated in age by forty years - discovered the existence of the electromagnetic field and devised a radically new theory which overturned the strictly mechanical view of the world that had prevailed since Newton's time.
The authors, veteran science writers with special expertise in physics and engineering, have created a lively narrative that interweaves rich biographical detail from each man's life with clear explanations of their scientific accomplishments. Faraday was an autodidact, who overcame class prejudice and a lack of mathematical training to become renowned for his acute powers of experimental observation, technological skills, and prodigious scientific imagination. James Clerk Maxwell was highly regarded as one of the most brilliant mathematical physicists of the age. He made an enormous number of advances in his own right. But when he translated Faraday's ideas into mathematical language, thus creating field theory, this unified framework of electricity, magnetism and light became the basis for much of later, 20th-century physics.
Faraday's and Maxwell's collaborative efforts gave rise to many of the technological innovations we take for granted today - from electric power generation to television, and much more. Told with panache, warmth, and clarity, this captivating story of their greatest work - in which each played an equal part - and their inspiring lives will bring new appreciation to these giants of science.

Electrostatics 1999: Proceedings of the 10th INT Conference, Cambridge, UK, 28-31 March 1999 provides an overview of recent research in electrostatics and an insight into the multifarious applications for electrostatics in industry. This comprehensive reference is ideal for researchers in physics, chemistry, and engineering who work in electrostatic research and technology.

This book is about pulse nuclear magnetic resonance (NMR), with its techniques, the information to be obtained, and practical advice on performing experiments. The emphasis is on the motivation and physical ideas underlying NMR experiments and the actual techniques, including the hardware used. The level is generally suitable for those to whom pulse NMR is a new technique, be they students in chemistry or physics on the one hand and research workers in biology, geology, or agriculture, on the other. The book can be used for a senior or first year graduate course where it could supplement the standard NMR texts.

The first publication of its kind in the field, this book describes comprehensively and systematically radio-frequency (rf) capacitive gas discharges of intermediate and low pressure and their application to gas laser excitation and to plasma processing. Text presents the physics underlying rf discharges along with techniques for obtaining such discharges, experimental methods and results, and theoretical and numerical modeling findings. Radio-Frequency Capacitive Discharges is written by well-known specialists in the field, authors of many theoretical and experimental works. They provide simple and clear discussions of complicated physical phenomena. A complete review on the state of the art is included. This interesting new book can be used as a textbook for students and postgraduates and as a comprehensive guidebook by specialists.

In magnetic systems of nano-meter size, the interplay between spin and charge of electrons provides unique transport phenomena. In magnetic superlattices, magnetic and non-magnetic metallic thin films with thickness of the order of one nano-meter are piled-up alternately. Since the discovery of giant magnetoresistance (GMR) in these superlattices in 1988, spin dependent transport phenomena in magnetic nanostructures have received much attention from both academic and technological points of view. Ferromagnetic tunnel junctions made of ferromagnetic metal electrodes and a very thin insulating barrier between them are also of current interest as magnetoresistive devices, where the tunneling current depends on the relative orientation of magnetization (TMR). In addition to magnetic superlattices and magnetic tunnel junctions, magnetic granular systems and magnetic dots have been studied extensively as magnetoresistive systems. Edited by two of the world's leading authorities, Spin Dependent Transport in Magnetic Nanostructures introduces and explains the basic physics and applications of a variety of spin-dependent transport phenomena in magnetic nanostructures with particular emphasis on magnetic multilayers and magnetic tunnel junctions.