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Books > Science & Mathematics > Physics > Electricity, magnetism & electromagnetism
This book addresses novel electronic and thermoelectronic properties arising from topological spin textures as well as topologically non-trivial electronic structures. In particular, it focuses on a unique topological spin texture, i.e., spin hedgehog lattice, emerging in a chiral magnet and explore its novel properties which are distinct from the conventional skyrmion lattice, and discusses the possibility of realizing high-temperature quantum anomalous Hall effect through quantum confinement effect in topological semimetal. This book benefits students and researchers working in the field of condensed matter physics, through providing comprehensive understanding of the current status and the outlook in the field of topological magnets.
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e., one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications."
Magnetism is one of the oldest and most fundamental problems of Solid State Physics although not being fully understood up to now. On the other hand it is one of the hottest topics of current research. Practically all branches of modern technological developments are based on ferromagnetism, especially what concerns information technology. The book, written in a tutorial style, starts from the fundamental features of atomic magnetism, discusses the essentially single-particle problems of dia- and paramagnetism, in order to provide the basis for the exclusively interesting collective magnetism (ferro, ferri, antiferro). Several types of exchange interactions, which take care under certain preconditions for a collective ordering of localized or itinerant permanent magnetic moments, are worked out. Under which conditions these exchange interactions are able to provoke a collective moment ordering for finite temperatures is investigated within a series of theoretical models, each of them considered for a very special class of magnetic materials. The book is written in a tutorial style appropriate for those who want to learn magnetism and eventually to do research work in this field. Numerous exercises with full solutions for testing own attempts will help to a deep understanding of the main aspects of collective ferromagnetism.
In this thesis, the pseudogap and the precursor superconducting state, which are of great importance in clarifying the superconductivity mechanism in high-temperature cuprate superconductors, are investigated with a c-axis optical study in YBa2(Cu1-xZnx)3Oy. Testing was performed over a wide energy range with smaller temperature intervals for several Zn-substituted samples, as well as for several carrier-doping levels. A spectral weight (SW) analysis, in which the pseudogap behavior can be separated from the superconducting condensate with the SW transfer to the high-energy region, revealed that the pseudogap is not the precursor of the superconductivity (carriers moving to the high-energy region with pseudogap opening never contribute to the superconducting condensation). Moreover, the high-energy transfer continues even below Tc for the Zn-substituted samples (in which we weaken the superconductivity), which gives evidence to the coexistence of the pseudogap and the superconducting gap below Tc. On the other hand, the analysis of optical conductivity revealed that a precursor state to superconductivity can be defined at temperatures much higher than Tc. The superconducting carrier density (ns) was calculated for each temperature (above and below Tc) and the results confirmed the existence of ns at temperatures above Tc. The observed real superconducting condensate (ns) above Tc puts a serious constraint on the theory for high- Tc superconductivity. A theory based on an inhomogeneous superconducting state, in which a microscopically phase-separated state in a doped Mott insulator can be observed, is the most plausible candidate. This theory can explain the existence of ns and the observed temperature range for the precursor superconducting state. The results obtained show that the pseudogap coexists with superconductivity below Tc and is not the precursor of superconductivity. On the other hand, it is also possible to define a precursor superconducting state that is different than the pseudogap. The temperature range and the observed superconducting condensate in this state can be explained with the help of the inhomogeneous superconducting state.
This monograph is concerned with the direct-scattering of
electromagnetic waves by one- and two-dimensional objects, and the
use of this technique in one-dimensional inverse profiling. It
discusses results of research into the method of this technique and
its application to specific problems.
This book summarizes the basics of electricity and magnetism prior to covariant formulation of Maxwell's equations. The book works out the basics of special relativity and then applies the covariant formalism to understand radiation, both in vacuum and in material medium. The emphasis is on cleaner mathematical formalism based on experimental facts. The book contains many problems/exercises which will help the students to understand the basics of the subject. The difference between the present book with existing books of this level lies in the presentation of the topics and the subjects chosen. Instead of presenting a lot of material related to electromagnetism, it presents some very important but selected problems of advanced electromagnetism to students who are learning it for the first time. This book is aimed at graduate/advanced graduate students who have done at least one basic level course in electricity and magnetism.
At first glance, the articles in this book may appear to have nothing in common. They cover such seemingly disparate subjects as the properties of small metallic clusters and the behavior of superfluid He3, nuclear physics and organic materials, copper oxides and mag netic resonance. Why have they been brought together, particUlarly in our time of narrow spe cialization? In fact, the properties and effects described in this book touch upon one and the same fundamental phenomenon: pair correlation. Introduced in the theory of superconductivity by J. Bardeen, L. Cooper, and J. Schrieffer (BCS), this effect plays a key role in various Fermi systems. The book consists of several sections. The first chapter is concerned with conven tional and high Tc superconductors. The second chapter describes two relatively young fami lies of superconductors: organics and fullerenes. Chapter III addresses the superfluidity of 3 He * The discovery of this phenomenon in 1971 was a big event in physics and last year was acknowledged by a Nobel prize. This book contains the text of the Nobel lecture. Chapters IV and V are devoted to correlations in finite Fermi systems such as small metallic clusters, C 60 anions, and atomic nuclei. The book thus covers a broad range of problems, illuminating the close ties between various areas of physics.
This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.
This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After introducing readers to dielectric, perovskites, advanced memories, and ferroelectric, it explains quantum simulation. Then, using molecular orbital calculation results, it explains the ferroelectric mechanism in perovskite titanium oxides in concrete terms. Lastly, the book examines the materials designed for high-performance ferroelectrics and discusses the future of high-speed memory.
Electromagnetism is one of the four fundamental forces in nature, and underlies almost everything we experience in our daily lives, whether we realise it or not. The complete theory was first written down in the late 19th century, and remains an essential part of a scientific education. The mathematics behind the theory, however, can be intimidatingly complex. Furthermore, it is not always clear to beginners why the theory is either useful or interesting, nor how it relates to modern research in theoretical physics.The aim of this book is to guide students towards a detailed understanding of the full theory of electromagnetism, including its practical applications. Later chapters introduce more modern formulations of the theory than are found in traditional undergraduate courses, thus bridging the gap between a first course in electromagnetism, and the advanced concepts needed for further study in physics. The final chapter reviews exciting current research stating that possible theories of (quantum) gravity may be much more closely related to electromagnetism than previously thought.Throughout the book, an informal conversational style is used to demystify intimidating concepts. Relevant mathematical ideas are introduced in a self-contained manner, and exercises are provided with full solutions to aid understanding. This book is essential reading for anyone undertaking a physics degree, but will also be of interest to engineers and chemists.
The present book covers the transport properties of superconductor/two dimensional electron gas Josephson junctions. Starting with the basic el ement, a superconductor/two dimensional electron gas interface, phase co herent Andreev reflection in hybrid Josephson junctions is introduced and further on, multiterminal structures are discussed. Special care is taken on explaining the underlying theoretical concepts related to the transport mech anisms. Employing a two dimensional electron gas in a semiconductor as a normal conductor opens up the possibility to observe effects not found in purely metallic junctions. One example is the light sensitivity of the semi conductor, which has a direct impact on the supercurrent in the Josephson junction. Many of the effects reported here rely on the fast technological progress in the epitaxial growth of III V semiconductor heterostructures. By using these layer systems, fascinating quantum effects have been found. Two examples out of many are the quantized conductance in a point contact and electron optics using ballistic electron beams. By combining heterostructures with su perconductors, many of the effects found in purely semiconductor systems can in a sense, be transferred to the superconducting state. A prominent example is the quantization of the critical current in a superconducting quantum point contact.
Based on courses given at the Ecole Polytechnique in France, this book covers not only the fundamental physics of semiconductors, but also discusses the operation of electronic and optical devices based on semiconductors. It is aimed at students with a good background in mathematics and physics, and is equally suited for graduate-level courses in condensed-matter physics as for self-study by engineers interested in a basic understanding of semiconductor devices.
This volume contains invited and contributed papers presented at the conference on 'Microscopy of Semiconducting Materials' held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Recent advances in semiconductor technology have made it possible to fabricate microcavity structures in which both photon fields and electron-hole pairs (or excitons) are confined in a small volume comparable to their wavelength. The radiative properties of the electron-hole pairs and excitons are modified owing to the drastic change in the structure of the electromagnetic-field modes. This book is the first to give a comprehensive account of the theory of semiconductor cavity quantum electrodynamics for such systems in the weak-coupling and strong-coupling regimes. The important concepts are presented, together with relevant, recent experimental results.
Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.
This book describes most recent progress in the properties, synthesis, characterization, modelling, and applications of nanomaterials and nanodevices. It begins with the review of the modelling of the structural, electronic and optical properties of low dimensional and nanoscale semiconductors, methodology of synthesis, and characterization of quantum dots and nanowires, with special attention towards Dirac materials, whose electrical conduction and sensing properties far exceed those of silicon-based materials, making them strong competitors. The contributed reviews presented in this book touch on broader issues associated with the environment, as well as energy production and storage, while highlighting important achievements in materials pertinent to the fields of biology and medicine, exhibiting an outstanding confluence of basic physical science with vital human endeavor. The subjects treated in this book are attractive to the broader readership of graduate and advanced undergraduate students in physics, chemistry, biology, and medicine, as well as in electrical, chemical, biological, and mechanical engineering. Seasoned researchers and experts from the semiconductor/device industry also greatly benefit from the book's treatment of cutting-edge application studies.
Physics of Semiconductor Devices covers both basic classic topics
such as energy band theory and the gradual-channel model of the
MOSFET as well as advanced concepts and devices such as MOSFET
short-channel effects, low-dimensional devices and single-electron
transistors. Concepts are introduced to the reader in a simple way,
often using comparisons to everyday-life experiences such as simple
fluid mechanics. They are then explained in depth and mathematical
developments are fully described.
Trichotillomania (TTM) is a complex disorder that is difficult to treat, and few effective therapeutic options exist. This client workbook helps the client through the 10-session, therapist-guided, Acceptance and Commitment Therapy (ACT) Enhanced Behavior Therapy for Trichotillomania (AEBT-T). AEBT-T is designed to help people with trichotillomania reduce their pulling, think differently about the internal experiences that trigger their pulling, and learn to live a more valued life. The approach blends traditional behavior therapy approaches of habit reversal training and stimulus control techniques with a more contemporary ACT-based approach. This ACT-based approach teaches clients to behave flexibly and in concert with their values whenever they face the uncomfortable thoughts, feelings, urges, and cravings that often trigger the pulling. Since its original publication in 2008, the intervention has been shown to be highly effective, and can also be successfully applied to older children and adolescents, which is covered in this new edition. Fully updated to reflect new research and organized in an easy-to-use session-by-session format with accompanying therapy support forms and materials, AEBT-T has proven efficacy and will be a valuable resource and powerful tool for clients who want to learn to manage their TTM and reduce pulling.
The discovery of high temperature superconductors (HTS) in 1986 by two IBM scientists led to an unprecedented explosion of research and development efforts world-wide because of the significant potential for practical applications offered by these materials. However, the early euphoria created by the exciting prospects was dampened by the daunting task of fabricating these materials into useful forms with acceptable superconducting properties. Progress towards this goal has been hindered by many intrinsic materials problems, such as weak-links, flux-creep, and poor mechanical properties. The above problems led to the development of the Second-Generation of HTS wires. Three methods were invented to produce flexible metallic substrates, which were also crystallographically biaxially textured, and resembled a long, mosaic single crystal. The first method invented is the Ion-Beam-Assisted-Deposition (IBAD). The second method developed was the Inclined-Substrate-Deposition (ISD). The third method invented is called the Rolling-assisted-biaxially-textured-substrates (RABiTS). The book is divided into four sections. The first section discusses the three methods to fabricate biaxially textured substrates, upon which, epitaxial YBCO or other HTS materials can be deposited to realize a single-crystal-like HTS wire. The second section includes chapters on various methods of HTS deposition such as pulsed laser ablation (PLD), thermal co-evaporation, sputtering, pulsed electron beam deposition, ex-situ BaF2 by co-evaporation flowed by annealing, chemical solution based ex-situ processes, jet vapor deposition, metal organic chemical vapor deposition (MOCVD), and liquid phase epitaxy (LPE).The third section includes detailed chapters on other HTS materials such as the various Tl-based and Hg-based conductors. These Second-Generation HTS conductors, also referred to as "Coated conductors" represent one of the most exciting developments in HTS technology. HTS wires based on this technology have the potential to carry 100-1000 times the current without resistance losses of comparable copper wire. HTS power equipment based on these HTS conductors has a potential to be half the size of conventional alternatives with the same or higher power rating and less than one half the energy losses. Upgrading of the world-wide electric power transmission and distribution with HTS based devices can significantly help in meeting the growing demand for electricity world-wide. There is little question that superconducting technology based on the Next-Generation HTS Superconducting Wires will make a substantial impact on the way we generate, transmit, distribute and use electric power. Of course the question is - how soon?
This book is unique because unlike others on the subject that focus on mathematical arguments, this volume emphasizes the original field concept, aiming at objectives in modern information technology. Written primarily for undergraduate students of physics and engineering, this book serves as a useful reference for graduate students and researchers too. With concise introductory arguments for the physics of electromagnetism, this book covers basic topics including the nature of space-time-dependent radiations in modern applications.
The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples. The book also describes experimental tools in nanoengineering that enable one to intentionally control the parameters of self-organized nanostructures, such as chemical composition, shape, size, density and relative arrangement of quantum dots and wires. Practical applications of nanoepitaxial technologies are discussed in the framework of recent advances in quantum dot lasers. |
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