This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

The present book covers the transport properties of superconductor/two dimensional electron gas Josephson junctions. Starting with the basic el ement, a superconductor/two dimensional electron gas interface, phase co herent Andreev reflection in hybrid Josephson junctions is introduced and further on, multiterminal structures are discussed. Special care is taken on explaining the underlying theoretical concepts related to the transport mech anisms. Employing a two dimensional electron gas in a semiconductor as a normal conductor opens up the possibility to observe effects not found in purely metallic junctions. One example is the light sensitivity of the semi conductor, which has a direct impact on the supercurrent in the Josephson junction. Many of the effects reported here rely on the fast technological progress in the epitaxial growth of III V semiconductor heterostructures. By using these layer systems, fascinating quantum effects have been found. Two examples out of many are the quantized conductance in a point contact and electron optics using ballistic electron beams. By combining heterostructures with su perconductors, many of the effects found in purely semiconductor systems can in a sense, be transferred to the superconducting state. A prominent example is the quantization of the critical current in a superconducting quantum point contact.

This volume contains invited and contributed papers presented at the conference on 'Microscopy of Semiconducting Materials' held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.

Electromagnetism is one of the four fundamental forces in nature, and underlies almost everything we experience in our daily lives, whether we realise it or not. The complete theory was first written down in the late 19th century, and remains an essential part of a scientific education. The mathematics behind the theory, however, can be intimidatingly complex. Furthermore, it is not always clear to beginners why the theory is either useful or interesting, nor how it relates to modern research in theoretical physics.The aim of this book is to guide students towards a detailed understanding of the full theory of electromagnetism, including its practical applications. Later chapters introduce more modern formulations of the theory than are found in traditional undergraduate courses, thus bridging the gap between a first course in electromagnetism, and the advanced concepts needed for further study in physics. The final chapter reviews exciting current research stating that possible theories of (quantum) gravity may be much more closely related to electromagnetism than previously thought.Throughout the book, an informal conversational style is used to demystify intimidating concepts. Relevant mathematical ideas are introduced in a self-contained manner, and exercises are provided with full solutions to aid understanding. This book is essential reading for anyone undertaking a physics degree, but will also be of interest to engineers and chemists.

Based on courses given at the Ecole Polytechnique in France, this book covers not only the fundamental physics of semiconductors, but also discusses the operation of electronic and optical devices based on semiconductors. It is aimed at students with a good background in mathematics and physics, and is equally suited for graduate-level courses in condensed-matter physics as for self-study by engineers interested in a basic understanding of semiconductor devices.

Recent advances in semiconductor technology have made it possible to fabricate microcavity structures in which both photon fields and electron-hole pairs (or excitons) are confined in a small volume comparable to their wavelength. The radiative properties of the electron-hole pairs and excitons are modified owing to the drastic change in the structure of the electromagnetic-field modes. This book is the first to give a comprehensive account of the theory of semiconductor cavity quantum electrodynamics for such systems in the weak-coupling and strong-coupling regimes. The important concepts are presented, together with relevant, recent experimental results.

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

This book highlights the preparation and characterization of efficient electromagnetic shielding composites containing bio-carbon derived from natural loofah with unique three-dimensional porous structures by means of entire structure design of composites according to shielding theory. The synergistic effect of multifunctional nanoparticles and bio-carbon on electromagnetic shielding mechanism, mechanical performance, and thermal stability of composites obtained has been holistically investigated. The discovery of this renewable, environmentally friendly, and inexpensive bio-carbon represents a new class of conductive materials with multi-interfaces and unravels further research and development of a wide variety of new electromagnetic shielding material systems with potential commercial applications ranging from electronic devices to energy management.

The discovery of high temperature superconductors (HTS) in 1986 by two IBM scientists led to an unprecedented explosion of research and development efforts world-wide because of the significant potential for practical applications offered by these materials. However, the early euphoria created by the exciting prospects was dampened by the daunting task of fabricating these materials into useful forms with acceptable superconducting properties. Progress towards this goal has been hindered by many intrinsic materials problems, such as weak-links, flux-creep, and poor mechanical properties.

The above problems led to the development of the Second-Generation of HTS wires. Three methods were invented to produce flexible metallic substrates, which were also crystallographically biaxially textured, and resembled a long, mosaic single crystal. The first method invented is the Ion-Beam-Assisted-Deposition (IBAD). The second method developed was the Inclined-Substrate-Deposition (ISD). The third method invented is called the Rolling-assisted-biaxially-textured-substrates (RABiTS).

The book is divided into four sections. The first section discusses the three methods to fabricate biaxially textured substrates, upon which, epitaxial YBCO or other HTS materials can be deposited to realize a single-crystal-like HTS wire. The second section includes chapters on various methods of HTS deposition such as pulsed laser ablation (PLD), thermal co-evaporation, sputtering, pulsed electron beam deposition, ex-situ BaF2 by co-evaporation flowed by annealing, chemical solution based ex-situ processes, jet vapor deposition, metal organic chemical vapor deposition (MOCVD), and liquid phase epitaxy (LPE).The third section includes detailed chapters on other HTS materials such as the various Tl-based and Hg-based conductors.

These Second-Generation HTS conductors, also referred to as "Coated conductors" represent one of the most exciting developments in HTS technology. HTS wires based on this technology have the potential to carry 100-1000 times the current without resistance losses of comparable copper wire. HTS power equipment based on these HTS conductors has a potential to be half the size of conventional alternatives with the same or higher power rating and less than one half the energy losses. Upgrading of the world-wide electric power transmission and distribution with HTS based devices can significantly help in meeting the growing demand for electricity world-wide. There is little question that superconducting technology based on the Next-Generation HTS Superconducting Wires will make a substantial impact on the way we generate, transmit, distribute and use electric power. Of course the question is - how soon?

This book is unique because unlike others on the subject that focus on mathematical arguments, this volume emphasizes the original field concept, aiming at objectives in modern information technology. Written primarily for undergraduate students of physics and engineering, this book serves as a useful reference for graduate students and researchers too. With concise introductory arguments for the physics of electromagnetism, this book covers basic topics including the nature of space-time-dependent radiations in modern applications.

Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described.
Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

This book demonstrates how NMR relaxation can be applied for structural diagnostics of chemical compounds, recognition of weak intermolecular interactions, determinations of internuclear distances and lengths of chemical bonds when compounds under investigation can exist only in solutions.* Written as a textbook for chemists, demanding little background in physics and NMR* Its practical approach helps the reader to apply the techniques in the lab* First book to teach NMR Relaxation techniques to chemists

The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples. The book also describes experimental tools in nanoengineering that enable one to intentionally control the parameters of self-organized nanostructures, such as chemical composition, shape, size, density and relative arrangement of quantum dots and wires. Practical applications of nanoepitaxial technologies are discussed in the framework of recent advances in quantum dot lasers.

The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

These Proceedings of a NATO-ARW (HTECH ARW 97 1843) held at the Oreanda Hotel, Yalta, Ukraine from April 29 till May 2, 1998 resulted from many discussions between various workers, concerning the need for a gathering of all (if possible) who were concerned with the subject of symmetry of the order parameter and pairing states for superconductivity. We applied ourselves in particular to High critical Temperature Superconductors (HTS), but also studied other unconventional superconductors. The study of HTS is one of the most prominent research subjects in solid state sciences. The understanding of the role of symmetry and pairing conditions are also thought to be necessary before technological applications since these features may be influenced by external fields. The workshop discussions have touched upon theoretical and experimental aspects, but also on related topics. These served as initiators for a very great amount of discussions with many comments from the audience. More than thirty "long lectures" and one on going "poster session" were held. Private discussions went unrecorded but obviously took place at many locations: lecture halls, staircases, cafes, bedrooms, bars, beach, bus, plane... Arguments openly reported for the first time were often quite sharp ones, -and this is an understatement."

This is the first biography of William Shockley, founding father of Silicon Valley - one of the most significant and reviled scientists of the 20th century. Drawing upon unique access to the private Shockley archives, veteran technology historian and journalist Joel Shurkin gives an unflinching account of how such promise ended in such ignominy.

This book is based on the contributions to a course, entitled Applied Magnetism, which was the 25th Course of the International School of Materials Science and Technology. The Course was held as a NATO Advanced Study Institute at the Ettore Majorana Centre in Erice, Sicily, Italy between the 1st and 12th July 1992, and attracted almost 70 participants from 15 different countries. The book deals with the theory, experiments and applications of the main topical areas of applied magnetism. These selected areas include the physics of magnetic recording, magnetic and magneto-optic recording devices, systems and media, magnetic fine particles, magnetic separation, domains and domain walls in soft magnetic materials, permanent magnets, magnetoresistance, thin film magneto-optics, and finally, microwave, optical and computational magnetics. The material is organised into I 0 self-contained chapters which together provide a comprehensive coverage of the subject of applied magnetism. The aim is to emphasise the connection between the fundamental theoretical concepts, key experiments and the important technological developments which have been achieved in this field up to the present time. Moreover, when and where possible, pointers to future trends are indicated which hopefully, together with the background material, will promote further advancement of research. The organizing committee would like to acknowledge the sponsorship of the NATO Scientific Affairs Division, the National Science Foundation of the USA, the Science and Engineering Research Council of the UK, the Italian Ministry of Education, the Italian Ministry of University and Scientific Research and the Sicilian Regional Government.

This book is an introduction to Lagrangian mechanics, starting with Newtonian physics and proceeding to topics such as relativistic Lagrangian fields and Lagrangians in General Relativity, electrodynamics, Gauge theory, and relativistic gravitation. The mathematical notation used is introduced and explained as the book progresses, so it can be understood by students at the undergraduate level in physics or applied mathmatics, yet it is rigorous enough to serve as an introduction to the mathematics and concepts required for courses in relativistic quantum field theory and general relativity.

An up-to-date and comprehensive review of magnetic storage systems, including particulate and rigid media, magnetic heads, tribology, signal processing spintronics, and other, future systems. A thorough theoretical discussion supplements the experimental and technical aspects. Each section commences with a tutorial paper, which is followed by technical discussions of current research in the area. Written at a level suitable for advanced graduate students.

The Handbook Series on Semico nductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

While most know Thomas Edison for his invention of the light bulb, his counterpart, George Westinghouse, is too often overlooked. Westinghouse, however, became known as one of the most prolific inventors and businessmen of the Industrial Revolution. This biography reveals the man whose teachers suspected was mentally disabled and who quit college after one semester, yet founded more than 60 different companies employing 50,000 people, and received 361 U.S. patents. He later fought the "Battle of the Currents" (AC vs. DC) with Thomas Edison and won. Westinghouse, with his engineers, provided power and light for the 1893 World's Columbian Exposition in Chicago. They harnessed the massive power of Niagara Falls and sent it over wires to light Buffalo and eventually the Northeast. His electric engines powered trains, and his air brakes stopped them. His scientific contributions forever changed the world.

The unique electronic band structure of graphene gives rise to remarkable properties when in contact with a superconducting electrode. In this thesis two main aspects of these junctions are analyzed: the induced superconducting proximity effect and the non-local transport properties in multi-terminal devices. For this purpose specific models are developed and studied using Green function techniques, which allow us to take into account the detailed microscopic structure of the graphene-superconductor interface. It is shown that these junctions are characterized by the appearance of bound states at subgap energies which are localized at the interface region. Furthermore it is shown that graphene-supercondutor-graphene junctions can be used to favor the splitting of Cooper pairs for the generation of non-locally entangled electron pairs. Finally, using similar techniques the thesis analyzes the transport properties of carbon nanotube devices coupled with superconducting electrodes and in graphene superlattices.