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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (Paperback, 1988 ed.)
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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (Paperback, 1988 ed.)
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The properties of Si02 and the Si-Si02 interface provide the key
foundation onto which the majority of semiconductor device
technology has been built Their study has consumed countless hours
of many hundreds of investigators over the years, not only in the
field of semiconductor devices but also in ceramics, materials
science, metallurgy, geology, and mineralogy, to name a few. These
groups seldom have contact with each other even though they often
investigate quite similar aspects of the Si02 system. Desiring to
facilitate an interaction between these groups we set out to
organize a symposium on the Physics and Chemistry of Si()z and the
Si-Si()z Interface under the auspices of The Electrochemical
Society, which represents a number of the appropriate groups. This
symposium was held at the 173rd Meeting of The Electrochemical
Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly
coincided with the ten year anniversary of the "International
Topical Conference on the Physics of Si02 and its Interfaces" held
at mM in 1978. We have modeled the present symposium after the 1978
conference as well as its follow on at North Carolina State in
1980. Of course, much progress has been made in that ten years and
the symposium has given us the opportunity to take a
multidisciplinary look at that progress.
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