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Point and Extended Defects in Semiconductors (Paperback, Softcover reprint of the original 1st ed. 1989)
Loot Price: R1,520
Discovery Miles 15 200
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Point and Extended Defects in Semiconductors (Paperback, Softcover reprint of the original 1st ed. 1989)
Series: NATO Science Series B:, 202
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The systematic study of defects in semiconductors began in the
early fifties. FrQm that time on many questions about the defect
structure and properties have been an swered, but many others are
still a matter of investigation and discussion. Moreover, during
these years new problems arose in connection with the
identification and char acterization of defects, their role in
determining transport and optical properties of semiconductor
materials and devices, as well as from the technology of the ever
in creasing scale of integration. This book presents to the reader
a view into both basic concepts of defect physics and recent
developments of high resolution experimental techniques. The book
does not aim at an exhaustive presentation of modern defect
physics; rather it gathers a number of topics which represent the
present-time research in this field. The volume collects the
contributions to the Advanced Research Workshop "Point, Extended
and Surface Defects in Semiconductors" held at the Ettore Majo rana
Centre at Erice (Italy) from 2 to 7 November 1988, in the framework
of the International School of Materials Science and Technology.
The workshop has brought together scientists from thirteen
countries. Most participants are currently working on defect
problems in either silicon submicron technology or in quantum wells
and superlattices, where point defects, dislocations, interfaces
and surfaces are closely packed together."
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