Plasma Charging Damage (Paperback, Softcover reprint of the original 1st ed. 2001)

In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.

General

Imprint:	Springer London
Country of origin:	United Kingdom
Release date:	December 2012
First published:	2001
Authors:	Kin P. Cheung
Dimensions:	235 x 155 x 19mm (L x W x T)
Format:	Paperback
Pages:	346
Edition:	Softcover reprint of the original 1st ed. 2001
ISBN-13:	978-1-4471-1062-0
Categories:	Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Industrial chemistry > General Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Books > Professional & Technical > Mechanical engineering & materials > Production engineering > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General Promotions
LSN:	1-4471-1062-5
Barcode:	9781447110620

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