"Introduction to Thin Film Transistors" reviews the operation,
application and technology of the main classes of thin film
transistor (TFT) of current interest for large area electronics.
The TFT materials covered include hydrogenated amorphous silicon
(a-Si: H), poly-crystalline silicon (poly-Si), transparent
amorphous oxide semiconductors (AOS), and organic
semiconductors.
The large scale manufacturing of a-Si: H TFTs forms the basis of
theactive matrix flat panel display industry. Poly-Si TFTs
facilitate the integration of electronic circuits into portable
active matrix liquid crystal displays, and are increasingly used in
active matrix organic light emitting diode (AMOLED) displays for
smart phones. The recently developed AOS TFTs are seen as an
alternative option to poly-Si and a-Si: H for AMOLED TV and large
AMLCD TV applications, respectively. The organic TFTs are regarded
as a cost effective route into flexible electronics.
As well as treating the highly divergent preparation and
properties of these materials, the physics of the devices
fabricated from them is also covered, with emphasis on performance
features such as carrier mobility limitations, leakage currents and
instability mechanisms. The thin film transistors implemented with
these materials are the conventional, insulated gate field effect
transistors, and a further chapter describes a new thin film
transistor structure: the source gated transistor, SGT.
The driving force behind much of the development of TFTs has
been their application to AMLCDs, and there is a chapter dealing
with the operation of these displays, as well as of AMOLED and
electrophoretic displays. A discussion of TFT and pixel layout
issues is also included.
For students and new-comers to the field, introductory chapters
deal with basic semiconductor surface physics, and with classical
MOSFET operation. These topics are handled analytically, so that
the underlying device physics is clearly revealed. These treatments
are then used as a reference point, from which the impact of
additional band-gap states on TFT behaviour can be readily
appreciated.
This reference book, covering all the major TFT technologies,
will be of interest to a wide range of scientists and engineers in
the large area electronics industry. It will also be a broad
introduction for research students and other scientists entering
the field, as well as providing an accessible and comprehensive
overview for undergraduate and postgraduate teaching programmes.
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