High Permittivity Gate Dielectric Materials (Paperback, Softcover reprint of the original 1st ed. 2013)

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Springer Series in Advanced Microelectronics, 43
Release date:	August 2016
First published:	2013
Editors:	Samares Kar
Dimensions:	235 x 155 x 27mm (L x W x T)
Format:	Paperback
Pages:	489
Edition:	Softcover reprint of the original 1st ed. 2013
ISBN-13:	978-3-662-50138-2
Categories:	Books > Professional & Technical > Technology: general issues > Engineering: general Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General Books > Science & Mathematics > Chemistry > Analytical chemistry > Qualitative analytical chemistry > Chemical spectroscopy, spectrochemistry > General Promotions
LSN:	3-662-50138-4
Barcode:	9783662501382

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