"The book comprehensively covers all the current and the emerging
areas of the physics and the technology of high permittivity gate
dielectric materials, including, topics such as MOSFET basics and
characteristics, hafnium-based gate dielectric materials, Hf-based
gate dielectric processing, metal gate electrodes, flat-band and
threshold voltage tuning, channel mobility, high-k gate stack
degradation and reliability, lanthanide-based high-k gate stack
materials, ternary hafnia and lanthania based high-k gate stack
films, crystalline high-k oxides, high mobility substrates, and
parameter extraction. Each chapter begins with the basics necessary
for understanding the topic, followed by a comprehensive review of
the literature, and ultimately graduating to the current status of
the technology and our scientific understanding and the future
prospects." .
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