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Toward Quantum FinFET (Hardcover, 2013 ed.)
Loot Price: R2,982
Discovery Miles 29 820
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Toward Quantum FinFET (Hardcover, 2013 ed.)
Series: Lecture Notes in Nanoscale Science and Technology, 17
Expected to ship within 10 - 15 working days
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This book reviews a range of quantum phenomena in novel nanoscale
transistors called FinFETs, including quantized conductance of 1D
transport, single electron effect, tunneling transport, etc. The
goal is to create a fundamental bridge between quantum FinFET and
nanotechnology to stimulate readers' interest in developing new
types of semiconductor technology. Although the rapid development
of micro-nano fabrication is driving the MOSFET downscaling trend
that is evolving from planar channel to nonplanar FinFET,
silicon-based CMOS technology is expected to face fundamental
limits in the near future. Therefore, new types of nanoscale
devices are being investigated aggressively to take advantage of
the quantum effect in carrier transport. The quantum confinement
effect of FinFET at room temperatures was reported following the
breakthrough to sub-10nm scale technology in silicon nanowires.
With chapters written by leading scientists throughout the world,
Toward Quantum FinFET provides a comprehensive introduction to the
field as well as a platform for knowledge sharing and dissemination
of the latest advances. As a roadmap to guide further research in
an area of increasing importance for the future development of
materials science, nanofabrication technology, and nano-electronic
devices, the book can be recommended for Physics, Electrical
Engineering, and Materials Science departments, and as a reference
on micro-nano electronic science and device design. Offers
comprehensive coverage of novel nanoscale transistors with quantum
confinement effect Provides the keys to understanding the emerging
area of the quantum FinFET Written by leading experts in each
research area Describes a key enabling technology for research and
development of nanofabrication and nanoelectronic devices
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