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Pulsed and Pulsed Bias Sputtering - Principles and Applications (Paperback, Softcover reprint of the original 1st ed. 2003) Loot Price: R2,753
Discovery Miles 27 530
Pulsed and Pulsed Bias Sputtering - Principles and Applications (Paperback, Softcover reprint of the original 1st ed. 2003):...

Pulsed and Pulsed Bias Sputtering - Principles and Applications (Paperback, Softcover reprint of the original 1st ed. 2003)

Edward V. Barnat, Toh-Ming Lu

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Loot Price R2,753 Discovery Miles 27 530 | Repayment Terms: R258 pm x 12*

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Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

General

Imprint: Springer-Verlag New York
Country of origin: United States
Release date: August 2014
First published: 2003
Authors: Edward V. Barnat • Toh-Ming Lu
Dimensions: 235 x 155 x 9mm (L x W x T)
Format: Paperback
Pages: 157
Edition: Softcover reprint of the original 1st ed. 2003
ISBN-13: 978-1-4613-5063-7
Categories: Books > Science & Mathematics > Chemistry > Organic chemistry > Polymer chemistry
Books > Science & Mathematics > Chemistry > Physical chemistry > General
Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
LSN: 1-4613-5063-8
Barcode: 9781461350637

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