Transport in Metal-Oxide-Semiconductor Structures - Mobile Ions Effects on the Oxide Properties (Paperback, 2011 ed.)

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Engineering Materials
Release date:	February 2013
First published:	2011
Authors:	Hamid Bentarzi
Dimensions:	235 x 155 x 6mm (L x W x T)
Format:	Paperback
Pages:	106
Edition:	2011 ed.
ISBN-13:	978-3-642-26688-1
Categories:	Books > Professional & Technical > Mechanical engineering & materials > Materials science > Testing of materials > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Books > Science & Mathematics > Chemistry > Analytical chemistry > Qualitative analytical chemistry > Chemical spectroscopy, spectrochemistry > General Promotions
LSN:	3-642-26688-6
Barcode:	9783642266881

Is the information for this product incomplete, wrong or inappropriate? Let us know about it.

Does this product have an incorrect or missing image? Send us a new image.

Is this product missing categories? Add more categories.

Review This Product

No reviews yet - be the first to create one!