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Defects and Properties of Semiconductors - Defect Engineering (Paperback, Softcover reprint of the original 1st ed. 1987)
Loot Price: R2,159
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Defects and Properties of Semiconductors - Defect Engineering (Paperback, Softcover reprint of the original 1st ed. 1987)
Series: Advances in Solid State Technology, 3
Expected to ship within 10 - 15 working days
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This volume contains nearly all of the papers presented at the
Symposium on "Defects and Qualities of Semiconductors" which was
held in Tokyo on May 17-18, 1984, under the sponsorship of the
SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized
by the promoting committee of the research project "Quality
Developement of Semiconductors by Utilization of Crystal Defects"
sponsored by the Science and Technology Agency of Japan. Defect
study in semiconductor engineering started originally with seeking
methods how to suppress generation of harmful defects during device
processing in order to achieve a high yield of device fabrication.
Recently, a new trend has appeared in which crystal defects are
positively utilized to improve the device performance and
reliability. A typical example is the intrinsic gettering technique
for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was
born. It is becoming more important to control density and
distribution of defects than to eliminate all the defects. Very
precise and deep knowledge on defects is required to establish such
techniques as generation and development of defects desired
depending on type of devices and degree of integration. Electrical,
optical and mechanical effects of defects should be also understood
correctly. Such knowledge is essential even for eliminating defects
from some specified device regions. It is the time now to
investigate defect properties and defect kinetics in an energetic
way. From this point of view, all the speakers in this symposium
were invited among the most active investigators in the field of
defect engineering in Japan.
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