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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors

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Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors (Hardcover, 1st ed. 2018) Loot Price: R3,332
Discovery Miles 33 320
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors (Hardcover, 1st ed. 2018): Mengqi Fu

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors (Hardcover, 1st ed. 2018)

Mengqi Fu

Series: Springer Theses

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Loot Price R3,332 Discovery Miles 33 320 | Repayment Terms: R312 pm x 12*

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This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

General

Imprint: Springer Verlag, Singapore
Country of origin: Singapore
Series: Springer Theses
Release date: December 2018
First published: 2018
Authors: Mengqi Fu
Dimensions: 235 x 155mm (L x W)
Format: Hardcover
Pages: 102
Edition: 1st ed. 2018
ISBN-13: 978-981-13-3443-6
Categories: Books > Professional & Technical > Technology: general issues > Nanotechnology
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components
Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Other manufacturing technologies > Precision instruments manufacture > General
Books > Professional & Technical > Mechanical engineering & materials > Materials science > Testing of materials > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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LSN: 981-13-3443-9
Barcode: 9789811334436

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